MOSFET device terminal and preparation method

Abstract

The invention discloses an MOSFET device terminal and a preparation method, relates to the field of semiconductor power devices, and aims at solving the problems that an existing passivation layer iscomplex in preparation process and high in cost. The MOSFET device terminal comprises a source region metal layer, a gate region metal layer and a peripheral cut-off region metal layer which are all distributed in the upper surface of an isolation oxide layer as well as dummy metal layers which are all distributed among the source region metal layer, the gate region metal layer and the peripheralcut-off region metal layer; and each of the upper surface of the isolation oxide layer and the upper surface and side walls of the dummy metal layers, the source region metal layer, the gate region metal layer and the peripheral cutoff region metal layer is provided with one silicon nitride layer; and silica glass layers are arranged between the dummy metal layers, between the dummy metal layers and the source region metal layer, between the dummy metal layers and the gate region metal layer, and between the dummy metal layers and the peripheral cut-off region metal layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, and in particular to a MOSFET device terminal and a preparation method thereof. Background technique [0002] In traditional power device MOSFET (English: Metal-Oxide-Semiconductor Field-Effect Transistor, Chinese: Metal-Oxide-Semiconductor Field-Effect Transistor) peripheral withstand voltage design, in order to reduce device leakage loss and improve device reliability, generally in the periphery of the device terminal and The gate area is protected by a passivation layer. In the traditional process, a passivation layer needs to be formed through a layer of photolithography process, which has the problems of complicated preparation process and high cost. Contents of the invention [0003] Embodiments of the present invention provide a MOSFET device terminal and a preparation method thereof, which are used to solve the problems of complex process and high cost in the prepar...

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Problems solved by technology

[0003] The embodiment of the present invention provides a MOSFET device terminal and its preparation method, which are used to solve the problems of complex process and high cost in the preparation of the existing passivation layer

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