Supercharge Your Innovation With Domain-Expert AI Agents!

Method of improving lattice damage

A lattice damage and wafer technology, applied in the field of image sensors, can solve problems such as lattice damage and affecting imaging quality

Pending Publication Date: 2021-01-15
GUANGZHOU CANSEMI TECH INC
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for improving the lattice damage, so as to solve the problem that the lattice damage in the weak area on the wafer affects the imaging quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of improving lattice damage
  • Method of improving lattice damage
  • Method of improving lattice damage

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The existing sidewall etching process needs to use an etching machine to perform a sidewall etching process on the wafer to form a sidewall. During the sidewall etching process, an electrostatic adsorption chuck (ESC, Electro Static chuck) is used. Chuck) absorbs the wafer to stabilize the wafer in the reaction chamber of the etching machine for plasma etching. The electrostatic adsorption chuck adopts a double-electrode structure. In the existing process, a one-step electrostatic discharge treatment process is generally adopted. The electrostatic discharge treatment process is very fast. If the charge between the wafer and the electrostatic adsorption chuck is not completely released, the charge Gathered on the surface of the wafer, it is easy to form static electricity and damage the surface of the wafer.

[0031] A method for improving lattice damage proposed by the present invention will be described in further detail below in conjunction with the accompanying drawi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for improving lattice damage. The method comprises the following steps: placing a wafer on a chuck, wherein a plasma etching process is completed on the wafer, the chuck includes an electrode, and the wafer is in contact with the electrode of the chuck; carrying out first electrostatic discharge processing on the wafer so as to release parts of charges on the wafer;carrying out second electrostatic discharge processing on the wafer, and providing a first reverse voltage for the wafer by the electrode so as to release parts of charges on the wafer; and carryingout third electrostatic discharge processing on the wafer, and using the electrode to provide a second reverse voltage for the wafer so as to complete charge release on the wafer. By optimizing a static electricity release treatment process, damage to lattices in a contact hole etching process caused by charge accumulation is reduced, and the imaging quality of a product is improved.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a method for improving lattice damage. Background technique [0002] CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) image sensor compared with charge-coupled device (Charge-coupled Device, CCD), charge injection device (Charge Injection Device, CID), due to its low power consumption, high integration, It is widely favored by the market due to its low cost, and has a promising application prospect. [0003] CMOS image sensors generally realize image transmission through the principle of photoelectric conversion, and the thickness of the oxide layer in the source and drain regions and the concentration of ion implantation have a great influence on the performance of the device. During the spacer sidewall etch process (spacer sidewall etch), the thickness of the oxide layer has a great influence on the performance of the device. The tr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/3105
CPCH01L21/3105
Inventor 孟凡顺陈耀祖陈忠奎易芳刘志攀
Owner GUANGZHOU CANSEMI TECH INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com