Semiconductor structure and forming method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof. The semiconductor structure includes a substrate structure having a plurality of first trenches extending in a first direction, a nucleation layer on the substrate structure, a compound semiconductor layer on the nucleation layer, a gate on the compound semiconductor layer, and a source and a drain on the compound semiconductor layer and on both sides of the gate. The semiconductor structure provided by the invention can effectively block the vertical expansion of space charges in the active region of the semiconductor structure, prevents the breakdown of the substrate caused by the conduction of the space charges extending to the conductive layer in the substrate structure, further improves the breakdown voltage, and allows the thinned semiconductor structure to be applied to high-voltage operation.

Description

technical field [0001] The present invention relates to a semiconductor technology, in particular to a semiconductor structure with a compound semiconductor layer and its forming method. Background technique [0002] Gallium nitride-based (GaN-based) semiconductor materials have many excellent material properties, such as high heat resistance, wide band-gap, and high electron saturation rate. Therefore, gallium nitride-based semiconductor materials are suitable for high-speed and high-temperature operating environments. In recent years, gallium nitride-based semiconductor materials have been widely used in light emitting diode (light emitting diode, LED) components, high-frequency components, such as high electron mobility transistors (high electron mobility transistors, HEMTs) with heterogeneous interface structures. . [0003] However, in the operation of a thinned high electron mobility transistor (HEMT) device, if a high voltage is applied, it is easy to expand the dep...

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Problems solved by technology

[0003] However, in the operation of a thinned high electron mobility transistor (HEMT) device, if a high voltage is applied, it is easy to expand the depletion region and conduct through the silicon substrate under the epitaxial layer, thereby causing substrate breakdown (substrate breakdown)

In the prior art, it is difficult to achieve a good balance between the thinning of the high electron mobility transistor device and the breakdown voltage (break down)

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