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A kind of gasse nanomaterial, liquid phase exfoliation method and application thereof

A nanomaterial, liquid phase exfoliation technology, applied in the field of two-dimensional materials, can solve the problem of high time and equipment requirements, and achieve the effects of low cost, uniform dispersion and clear shape

Active Publication Date: 2022-08-09
NORTHWEST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the defects of the existing liquid phase exfoliation preparation method and the problems of long time in the preparation process and high equipment requirements, the present invention discloses a GaSe nanomaterial, a liquid phase exfoliation method and its application, including mixing gallium selenide and isopropyl ketone to obtain Mix the solution, place the mixed solution in a water bath, obtain an initial dispersion after ultrasonic dispersion, add isopropanone to the initial dispersion and place it in a water bath, separate the supernatant and perform a second ultrasonic Disperse, separate and take the supernatant to dry

Method used

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  • A kind of gasse nanomaterial, liquid phase exfoliation method and application thereof
  • A kind of gasse nanomaterial, liquid phase exfoliation method and application thereof
  • A kind of gasse nanomaterial, liquid phase exfoliation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Step 1: Prepare 50 mg of GaSe with a purity of 99.995%.

[0050] Step 2: Weigh 2 ml of IPA with a purity of 99.7% into a transparent glass dispensing bottle, add the GaSe weighed in step 1 into the IPA solution, and seal the glass bottle.

[0051] Step 3: Place the sealed glass bottle in a water bath for 3 to 4 hours in an ultrasonic device with a power of 300W and a frequency of 40kHz, keep the bath temperature at 25°C, and perform ultrasonic dispersion. The speed of ultrasonic dispersion is 8000 to 10000rpm, and then the initial dispersion is obtained. liquid.

[0052] Step 4: Add 2 ml of IPA isoacetone to the initial dispersion, place it in a water bath, centrifuge at 10,000 rpm for 3 min, and separate the supernatant for use.

[0053] Step 5: Put the supernatant separated in Step 4 into a water bath for 2h in an ultrasonic device with a power of 300W and a frequency of 40kHz, keep the bath temperature at 25°C, and then centrifuge the dispersion at 10,000rpm for 3mi...

example 1

[0054] The optical spectrum of the GaSe granular material used in Example 1 is as follows: figure 1 As shown, the obtained Raman spectrum is as Figure 9 shown;

[0055]The optical photos of the obtained GaSe nanomaterials are as follows: figure 2 As shown, the Raman spectrum is as Figure 10 As shown, the AFM spectrum is as Figure 18 shown;

[0056] figure 1 and figure 2 It shows that the thickness of the obtained product is thick, the morphology is irregular flake, and the output is more.

[0057] Figure 9 , Figure 10 and Figure 18 It shows that the obtained product is GaSe nanomaterial and its monolayer thickness is thinned to 8.727nm. According to the literature (Tang Luping. CVD preparation of gallium selenide nanostructure and its photoelectric properties research [D].), it can be judged that the number of layers is 8-9 layers, and the resulting flakes were heavily stacked.

Embodiment 2

[0059] Step 1: Same as Example 1.

[0060] Step 2: Same as Example 1.

[0061] Step 3: Place the sealed glass bottle in a water bath for 3-4 hours in an ultrasonic device with a power of 300W and a frequency of 40kHz, and keep the bath temperature at 35°C.

[0062] Step 4: Same as Example 1.

[0063] Step 5: Put the supernatant liquid separated in step 4 into a water bath for 2h in an ultrasonic device with a power of 300W and a frequency of 40kHz, keep the bath temperature at 35°C, and then centrifuge the dispersion liquid at a speed of 10000rpm for 3min to separate the supernatant liquid.

[0064] The color of the supernatant obtained from the reaction was lighter than that of Example 1.

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Abstract

The invention discloses a GaSe nanomaterial, a liquid phase exfoliation method and application thereof. The method includes mixing gallium selenide and isoacetone to obtain a mixed solution, placing the mixed solution in a water bath, and performing ultrasonic dispersion to obtain an initial dispersion solution , and then add isoacetone to the initial dispersion liquid and place it in a water bath, separate and take the supernatant liquid and carry out secondary ultrasonic dispersion, and then separate and take the supernatant liquid and dry it. Its thickness can be controlled by adjusting the experimental temperature or centrifugal speed. No template is required in the process of preparing materials of different thicknesses. The process is simple and the cost is low. The prepared two-dimensional GaSe nanomaterials have a large number, uniform dispersion, and uniform thickness. , and can control different experimental conditions to fabricate GaSe nanomaterials with different thicknesses as needed.

Description

technical field [0001] The invention belongs to the field of two-dimensional materials, and relates to a GaSe nano material, a liquid phase exfoliation method and applications thereof. Background technique [0002] III-VI chalcogenides (MX; M=Ga, In; X=S, Se, Te) are a new type of semiconductor layered two-dimensional (2D) materials. Gallium selenide (GaSe) is a representative compound of this new type of semiconductor layered compound. Gallium Selenide is a p-type material, and the crystal exhibits a layered hexagonal structure. Gallium selenide has strong in-plane covalent bonds and weak out-of-plane van der Waals interactions, high carrier mobility, suitable optical band gap, nonlinear optical properties and photoresponse characteristics, so it is widely used in solar cells, nonlinear optics , Hertz generators, high-speed electronic devices and other fields have broad application prospects. [0003] Multilayer GaSe is a direct band gap semiconductor (2.1 eV), and singl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/00B82Y40/00
CPCC01B19/007B82Y40/00C01P2002/82C01P2004/02C01P2004/04C01P2004/20C01P2006/80Y02P70/50
Inventor 张志勇高虹齐晓斐曲瑞郭昱希邹雷登赵武王雪文赵丽丽
Owner NORTHWEST UNIV