Method for improving size of Fins of fin transistor

Abstract

The invention provides a method for improving the size of Fins of a fin transistor Fin, and the method comprises the steps: providing a first semiconductor structure comprising a plurality of Fins, and forming a first hard mask layer and a second hard mask layer on the tops of the Fins; forming a first thin oxide layer on the side walls of the Fins; cutting off a part of Fins in the plurality of Fins, and the first hard mask layer, the second hard mask layer and the thin oxide layer on the Fins to form a second semiconductor structure; forming a silicon buffer layer on the second semiconductorstructure; covering a silicon monoxide layer on the second semiconductor structure on which the silicon buffer layer is formed by adopting a fluid chemical vapor deposition method; and annealing thesecond semiconductor structure. In the manufacturing process of the FinFET device, in order to avoid consumption of Fin in the FCVD and subsequent annealing process, a silicon buffer layer is formed on the Fin after Fin forming and before the FCVD process so as to neutralize consumption of the Fin in the FCVD and subsequent annealing process, and therefore it is ensured that the morphology and size of the Fin are not affected.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving the size of a fin transistor Fin. Background technique [0002] Fin transistor (FinFET) has become a popular advanced CMOS technology in recent years. Compared with traditional devices, FinFET technology has the advantages of increasing transistor density and electrical performance. The shape and size of Fin (fin) in the device are decisive factors for the electrical parameters of the device. The high-temperature process after fin formation will affect the shape and size of the fin. After the fin formation, the fluid chemical vapor deposition method FCVD is directly performed, so the fin will be consumed during the FCVD and its subsequent anneal Anneal process, thus changing Fin shape and size. [0003] Therefore, a new method needs to be proposed to solve the above problems. Contents of the invention [0004] In view of the above-mentioned shor...

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method for improving the size of the fin transistor Fin, which is used to solve the problem of Fin due to high-temperature annealing after Fin formation in the manufacture of FinFET devices in the prior art. The problem of consumption that causes the shape and size of Fin to change

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