Silicon wafer roughening solution

A technology of silicon wafer and hair liquid, which is applied in the field of electronic chemicals, can solve problems such as tip discharge and affect the performance of IGBT devices, and achieve the effects of improving oxidation, eliminating sharp corners on microscopic surfaces, and reducing the activation energy of initial reactions

Active Publication Date: 2021-01-29
湖北兴福电子材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Microscopic sharp corners on the surface of silicon wafers may cause sharp discharges when subjected to high voltages, which will affect the performance of IGBT devices
Not suitable for the development trend of ultra-high voltage in the future

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-14

[0063] The content of each component according to the conceived examples and comparative examples of the present invention is listed in Table 1, and the balance is water.

[0064] Table 1

[0065]

[0066]

[0067] The above-mentioned embodiments 1-14 are all configured according to the following steps:

[0068] (1) Sampling according to the ratio in the above table for later use;

[0069] (2) Slowly add mineral acid to the oxidizing agent, mix well, and cool to below 40°C;

[0070] (3) Add fluorine-containing compound in the mixed acid of step (2), mix evenly, set aside;

[0071] (4) Add the long-chain organic matter into the buffer and mix evenly, and then slowly add the mixed solution into the mixed acid in step (2), mix evenly, and obtain the hair removal solution described in Examples 1-6.

[0072] The above comparative example 1 is configured according to the following steps:

[0073] (1) according to mass percent sulfuric acid 70%, nitric acid 6% and hydrofluo...

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Abstract

The invention discloses a roughness-controllable silicon wafer roughening solution without microscopic surface sharp corners, which comprises the following main components: an inorganic acid, an oxidant, a fluorine-containing compound, a buffer agent, a long-chain organic matter and water. By adjusting the addition amount of each component, the surface roughness of an etched silicon wafer can be controlled, and no microcosmic sharp corner is generated on the surface of the etched silicon wafer.

Description

technical field [0001] The invention belongs to the field of electronic chemicals, and in particular relates to a silicon wafer dehairing liquid and a preparation method thereof Background technique [0002] In the IGBT power device chip, it is necessary to grow a metal layer on the back of the silicon chip to reduce the body resistance of the device and the contact resistance of the electrode, so that the current can effectively pass through the power device without excessive power loss. [0003] When the surface of the silicon wafer is smooth, it is difficult for metal atoms to diffuse, stay and gather on the surface, so the power device chip generally requires the silicon wafer to have a certain roughness to increase the actual contact area between the metal film and the silicon wafer surface, so that the metal film and the silicon wafer surface The substrate is bonded more tightly, improving adhesion and structural compactness. At the same time, the roughened surface ca...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08H01L21/331
CPCC09K13/08H01L29/66325
Inventor 冯凯王书萍贺兆波郝晓斌张庭徐子豪尹印万杨阳
Owner 湖北兴福电子材料股份有限公司
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