Volatile and nonvolatile CuxO memristor and regulation and control method thereof

A non-volatile, memristor technology, applied in electrical components and other directions, can solve the problems of complex process, little mention of memristor volatility, unfavorable cost control, etc., to achieve process simplification, reduce edge leakage, Improves consistency and repeatability

Active Publication Date: 2021-01-29
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In some literatures, it is also mentioned to dope the active metal in the functional layer to achieve the volatile and non-volatile transition of the device, but the doping process may introduce impurity ions, and the process is complicated, which is not conducive to cost control
In addition, many literatures have studied Cu-based 2 Non-volatility of memristors with O functional layer, but with respect to Cu 2 Volatility of O memristors rarely mentioned

Method used

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  • Volatile and nonvolatile CuxO memristor and regulation and control method thereof
  • Volatile and nonvolatile CuxO memristor and regulation and control method thereof
  • Volatile and nonvolatile CuxO memristor and regulation and control method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1: A kind of Cu with both volatile and non-volatile properties x O memristor preparation method

[0039] Cu provided in this example x O memristor, TiN / Cu with small hole structure x O / Pt memristor, the structure of which is as figure 1 and figure 2 Shown; where the bottom electrode is Pt, the thickness is 100nm; functional layer Cu x The thickness of O is 60nm; the insulating layer on the bottom electrode is SiO 2 , with a total thickness of 100nm; the upper electrode is TiN, with a thickness of 100nm.

[0040] Describe Cu in detail below x The preparation method of O memristor:

[0041] (1) Bottom electrode preparation

[0042] Substrate cleaning: Si / SiO 2 Soak the substrate in analytical pure acetone for the experiment, put it into an ultrasonic cleaning machine with a power of 60w, and sonicate for 10 minutes; immerse the sample cleaned by acetone in pure ethanol for the experiment, and ultrasonicate for 10 minutes; the sample cleaned by ethanol...

Embodiment 2

[0056] Example 2: A TiN / Cu with both volatile and non-volatile properties x Control method of O / Pt memristor

[0057] In the regulation and testing stage, the test adopts DC test. In general, it can be carried out as follows:

[0058] (1) Forming the selected memristor unit, the first electrical operation causes Cu vacancies to migrate and redistribute, forming an unstable conductive channel; wherein the limiting current in the forming process is selected as 50uA, and the voltage scanning range is 0V-5V;

[0059] (2) Limiting the current setting of the memristor unit for testing.

[0060] The following is the Cu prepared in Example 1 x A method for regulating and testing the memristor specifically comprises the following steps:

[0061] (1) Select a memristor unit on the sample, stick two probes on the upper electrode and the reserved lower electrode area respectively, apply a positive voltage to the probe connected to the upper electrode, and ground the probe connected to...

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Abstract

The invention belongs to the technical field of microelectronic devices, and discloses a volatile and nonvolatile CuxO memristor and a regulation and control method thereof. The volatile and nonvolatile CuxO memristor comprises a lower electrode layer (4), a functional layer (3) and an upper electrode layer (1) stacked from bottom to top, the functional layer (3) is a CuxO functional layer, x is larger than 1.8 and smaller than 2, and the functional layer is deposited to enable the functional layer to be in contact with the lower electrode layer; and the upper electrode layer is deposited on the functional layer. The key structure and composition of the memristor are improved, CuxO serves as a functional layer, x is larger than 1.8 and smaller than 2, the chemical proportion is close to Cu2O, the volatile and nonvolatile CuxO memristor can be obtained, the CuxO memristor is based on Cu vacancy modulation, Cu vacancies can be induced through simple limiting current to construct synapsesand conductive wires, and volatility and non-volatility are achieved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more specifically, relates to a volatile and non-volatile Cu x O memristor and its regulation method, the memristor can induce Cu vacancies to form clusters and conductive filaments by limiting the current, and realize the transition between volatile and nonvolatile devices, which can be used for neuromorphic computing and artificial synapse realization. Background technique [0002] Volatile threshold transition (TS) and non-volatile resistance transition (MS) are two typical responses of memristors to voltage. The threshold transition behavior of loss is used in circuit switches and analog neurons because of its nonlinear resistance change; in the construction of artificial neural networks, which are currently researched hotly, both volatile and non-volatile memristors are relied on. If volatile and non-volatile properties can be realized in the same memristive device, it w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/821H10N70/20H10N70/8833H10N70/011
Inventor 孙华军王涛缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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