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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in the field of quantum dots, can solve the problems of short life and low efficiency of quantum dot light-emitting diode devices, and achieve the effect of reducing interface resistance and improving device efficiency

Active Publication Date: 2021-01-29
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming at solving the problem of low device efficiency of quantum dot light-emitting diodes due to the existence of interface resistance in existing quantum dot light-emitting diodes and the problem of shorter lifespan

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  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof

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Embodiment 1

[0065] 1. Configuration method of cross-linking solution:

[0066] At room temperature, 0.1 mmol of thioglycolic acid was dispersed into 2 ml of ethanol for later use to prepare the cross-linking solution.

[0067] 2. A method for preparing a quantum dot light-emitting diode, the specific steps of which are as follows:

[0068] Use a pipette gun to extract 100ul of CdSe / ZnS (30mg / ml) red quantum dot solution, and then spin-coat CdSe / ZnS on a substrate containing ITO and a hole transport layer at a speed of 2000rpm / 30s A red quantum dot solution to prepare a quantum dot solid film;

[0069] Use a pipette gun to draw 100ul of the cross-linking solution and spread it on the quantum dot solid film for 5 minutes, and then dry the substrate by idling at a speed of 2000rpm / 30s;

[0070] First weigh 60mg of ZnO nanoparticles and disperse them in 2ml of ethanol solution, after uniform dispersion, then add 0.05mmol of mercaptoethylamine reagent to the dispersed ZnO nanoparticles solut...

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Abstract

The invention discloses a quantum dot light-emitting diode and a preparation method thereof, the quantum dot light-emitting diode comprises a quantum dot light-emitting layer and an electron transportlayer which are arranged between a cathode and an anode, and the contact surfaces of the quantum dot light-emitting layer and the electron transport layer are respectively combined with a first modifier and a second modifier. The first modifier is a mercaptoamine compound, and the second modifier is a mercaptoacid compound; or the first modifier is a mercaptoacid compound, and the second modifieris a mercaptoamine compound. The combination of the first modifier and the second modifier enables a cross-linking interface to be formed between the quantum dot light-emitting layer and the electrontransport layer, and the cross-linking interface can provide a transmission channel for charge transmission, thereby effectively reducing the interface resistance between the quantum dot light-emitting layer and the electron transport layer, and improving the device efficiency and the service life of the quantum dot light-emitting diode.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] In the field of new display technology, quantum dot display is hailed as an important direction of next-generation display technology. At present, a large number of scientific and technological achievements have been made in the research of quantum dot light-emitting diode devices, but there is still a certain distance from the quantum dot display that can be truly applied to industrial manufacturers. [0003] There are still many problems to be solved in quantum dot-based light-emitting diode technology, such as life, efficiency, stability and other issues; in quantum dot light-emitting diodes, no matter what kind of problems will involve interface issues. Interfacial resistance will occur between different interfaces in quantum dot light-emitting devices, especially between the lumin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K85/00H10K50/00H10K50/115H10K50/16H10K71/00
Inventor 程陆玲
Owner TCL CORPORATION
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