A High Performance Millimeter Wave Low Noise Composite Amplifier
A millimeter-wave, low-noise technology, used in amplifiers, amplifiers with semiconductor devices/discharge tubes, improving amplifiers to reduce noise effects, etc., can solve problems such as low gain, poor stability, insufficient bandwidth, etc. Effects of stability, prevention of deterioration of performance, and ease of wiring
Active Publication Date: 2021-07-16
深圳市易星标技术有限公司
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Problems solved by technology
The frequency range of millimeter waves is 26.5-300GHz. RF chips designed in this frequency band mainly face problems such as self-excited oscillation, large off-chip interference, low gain, insufficient bandwidth, and low gain flatness, which further lead to insufficient performance of finished chips. Poor stability and other issues
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[0021] Such as Figure 1-3 As shown, a high-performance millimeter-wave low-noise composite amplifier described in the present invention includes two cascode amplifying units arranged in series and having the same structure, and the input stage of the cascode amplifying unit at the front end is connected through a capacitor C1 The input pad GSG1 is connected to the output pad GSG2 through the capacitor C5 at the output stage of the back-end cascode amplifier unit. The output stage of the cascode amplifier unit at the front end is connected to the input stage of the cascode amplifier unit at the rear end through a capacitor C4.
[0022] The cascode amplifier unit mainly includes cascaded MOS transistors M1 and MOS transistors M2: the gate of the MOS transistor M1 is preceded by an input matching circuit as an input stage, and the voltage terminal of the input matching circuit is biased by the gate of the previous stage. The setting circuit is connected to the DC pad Vg1. The ...
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The invention discloses a high-performance millimeter-wave and low-noise composite amplifier, which relates to communication technical equipment. This solution is proposed in view of the problems of large off-chip interference and low gain flatness of the amplifier in the prior art. It includes two cascode amplifier units arranged in series with the same structure, the input stage of the front-end cascode amplifier unit is connected to the input pad GSG1 through capacitor C1, and the output stage of the rear-end cascode amplifier unit is connected to the output through capacitor C5 Pad GSG2; a capacitor C4 is connected in series between the two cascode amplifier units. The advantage is that the two-stage cascode amplifying unit is complemented by corresponding input matching circuits, output matching circuits and cascode matching circuits, and the comprehensive design improves the gain, bandwidth and gain flatness of the millimeter-wave low-noise amplifier.
Description
technical field [0001] The invention relates to communication technology equipment, in particular to a high-performance millimeter-wave and low-noise composite amplifier. Background technique [0002] The millimeter-wave low-noise amplifier is an important module in the 5G communication radio frequency chip, which is widely used in automotive radar, precision guidance and satellite communication, etc., and will also enter the field of civilian communication in the future. At present, the millimeter-wave communication integrated circuit has become the key research content of high-tech industries in various countries. Its characteristics of large data throughput and short communication delay can greatly improve the combat capability of national defense high-tech weapons, and can promote wireless communication in the field of intelligent transportation. The reliable realization of human-driven cars can improve the work efficiency of users in the field of civil communication. T...
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IPC IPC(8): H03F1/26H03F3/195
CPCH03F1/26H03F3/195
Inventor 邹宇陈志坚郑彦祺李斌
Owner 深圳市易星标技术有限公司