Simple negative voltage reference circuit

Abstract

The invention discloses a simple negative voltage reference circuit which comprises a negative reference voltage circuit and an output operational amplifier circuit, the negative reference voltage circuit comprises an S pole of a PMOS3 grounded, a G pole and a D pole of the PMOS3 are in short circuit, and the D pole of the PMOS3 is connected with a D pole of a DEPN1; the G electrode and the S electrode of the DEPN1 are connected with a negative voltage VSS, and the D electrode of the PMOS3 outputs a negative reference voltage VB. According to the output operational amplifier circuit, a negative reference voltage VB is connected with a G electrode of an NMOS6, and a D electrode of the NMOS6 is connected with a D electrode of a PMOS4; the G electrode and the D electrode of the PMOS4 are in short circuit, and the S electrode of the PMOS4 is grounded; the G electrode of the PMOS4 is connected with the G electrode of the PMOS5; the S pole of the POMS5 is grounded; the D electrode of the POMS5 is connected with the D electrode of the NMOS7; the D electrode and the G electrode of the NMOS7 are in short circuit; the S pole of the NMOS7 is connected with the S pole of the NMOS6 and then isconnected with the D pole of the DEPN2; the G electrode and the S electrode of the DEPN2 are connected with the negative voltage VSS; the D electrode of the NMOS7 outputs a negative voltage referenceVREF. The circuit is simple in structure, small in occupied chip area, low in cost, high in process adaptability and suitable for a compound semiconductor circuit system powered by negative voltage.

Description

technical field [0001] The invention relates to the field of compound semiconductors, in particular to a simple negative voltage reference circuit. Background technique [0002] Nowadays, compound semiconductor devices are more and more widely used. In the compound semiconductor circuit system, it is often necessary to drive the compound semiconductor device with a negative voltage reference source, so that the superior performance of the compound semiconductor device can be fully utilized. [0003] The most classic voltage reference circuit in integrated circuits is the bandgap voltage reference source. The traditional bandgap voltage reference source Vbg is generally composed of two parts: VBE+nVT, VBE is the base and emitter voltage of the negative temperature coefficient bipolar transistor (BJT), VT is the equivalent thermal voltage of the positive temperature coefficient, and n is the ratio Coefficient, n>1. Vbg is limited by the base and emitter voltage VBE of abo...

AI Technical Summary

Problems solved by technology

[0007] In summary, the negative voltage reference value generated by the typical negative voltage reference circuit in the prior art is fixed, about -1.2 volts

And it has high requirements on the production process, because T6, T7 and T8 in the circuit structure are special function devices, it is difficult to integrate in the general standard CMOS process

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