Bidirectional power device and manufacturing method thereof

A bidirectional power device and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of high power consumption and low device conduction efficiency, and achieve the effect of reducing the area

Pending Publication Date: 2021-02-02
HANGZHOU SILAN MICROELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the MOS process using a planar gate structure requires sufficient area to meet higher withstand voltage requirements, and at the same time, the conduction efficiency of the device is very low and the power consumption is large

Method used

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  • Bidirectional power device and manufacturing method thereof
  • Bidirectional power device and manufacturing method thereof
  • Bidirectional power device and manufacturing method thereof

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Embodiment Construction

[0048] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0049] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0050] If it is intended to describe the situation of being directly on a...

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PUM

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Abstract

The invention discloses a bidirectional power device and a manufacturing method thereof. The bidirectional power device comprises: a semiconductor layer; a first doped region, which is located in thesemiconductor layer; a plurality of trenches of a first trench region, wherein the trenches are located in the first doped region and divide the first doped region into alternating first-type sub-doped regions and second-type sub-doped regions; a gate dielectric layer, that covers the side walls of the lower parts of the plurality of trenches of the first trench region; a shielding dielectric layer, that covers the side walls of the upper parts of the plurality of trenches of the first trench region; and grid conductors, which are located in the plurality of trenches of the first trench regionand make contact with the grid dielectric layer and the shielding dielectric layer separately, wherein each grid conductor comprises a control grid and a shielding grid which are connected, the control grid makes contact with the grid dielectric layer, the shielding grid makes contact with the shielding dielectric layer, the thickness of the shielding dielectric layer is inconsistent, and the thickness of at least a part of the shielding dielectric layer is greater than the thickness of the gate dielectric layer. According to the device, the voltage withstanding performance of the device is improved through the setting that the thickness of at least a part of the shielding dielectric layer is greater than the thickness of the gate dielectric layer.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and more specifically, to a bidirectional power device and a manufacturing method thereof. Background technique [0002] Bidirectional power devices are widely used in charging devices with a secondary charging function. Taking the lithium battery charging and discharging device as an example, when the lithium battery charging and discharging device continues to supply power to the terminal equipment to a certain extent, it is necessary to prevent the lithium battery from over-discharging to prevent the terminal equipment from stopping, and to charge the lithium battery in time. In the process of charging the lithium battery, the lithium battery also needs to supply power to the terminal equipment, and at the same time prevent the lithium battery from being overcharged. Therefore, in order to manage and control the charge and discharge state of the lithium battery, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8232H01L29/06H01L27/02
CPCH01L21/8232H01L21/823878H01L29/0603H01L29/0615H01L29/0684H01L27/0203H01L29/66621H01L29/7834H01L29/42368H01L29/1087H01L29/41766
Inventor 杨彦涛张邵华
Owner HANGZHOU SILAN MICROELECTRONICS
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