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70results about How to "Prolonged diffusion time" patented technology

Improved method for preparing layered enriched lithium-manganese-nickel oxide by low-heat solid-phase reaction

The invention provides an improved method for preparing layered enriched lithium-manganese-nickel oxide by low-heat solid-phase reaction. The method comprises the following steps: weighing lithium hydroxide monohydrate, nickel acetate and manganese acetate, and oxalic acid dihydrate according to the stoichiometry as follows: Li1+xMnyNi1-x-yO2, x being more than 0 and less than or equal to 1 / 3, y being more than 0 and less than 1, and x+y being more than 0 and less than 1 (wherein the mole ratio of LiOH.H2O to C2H2O4.2H2O is 1:1-1.2), and adding into a ball milling tank together for balling milling for 0.5-2h; obtaining slurry, adding deionized water in the slurry to adjust concentration, spraying and drying the slurry, and roasting the dried powder to obtain the final product -Li1+xMnyNil-x-yO2. The improved method has the following advantages: the process flow is short, the component of the material can be accurately controlled, the problems of material loss and inaccurate stoichiometry caused by repeatedly washing the product in a liquid phase method are overcome, the generation of a large quantity of waste water is avoided; simultaneously, the shape and particle size of a synthesized material can be controlled, the engineering index requirement can be achieved, the impurity pollution caused by dependence of a synthetic material by a solid phase method on crushing process can be overcome, the enriched lithium-manganese-nickel oxide has typical layered structure property, the particle size is 3-12mum, the specific capacity is high, and the cyclic performance is stable.
Owner:湖南金富力新能源股份有限公司

Method for preparing ternary positive electrode material of high-performance lithium ion battery at low ammonia concentration

The invention discloses a method for preparing a ternary positive electrode material of a high-performance lithium ion battery at low ammonia concentration, and belongs to the technical field of positive electrode materials of lithium ion batteries. The method comprises the following steps: dissolving salt containing nickel, cobalt and manganese in deionized water to prepare a mixed salt solution,adding a complexing agent into the mixed salt solution, adding acid to obtain a mixed solution; continuously pumping the mixed solution and the NaOH solution into a continuous coprecipitation reaction kettle filled with bottom liquid ammonia water respectively, enabling the total ammonia concentration of the reaction kettle to be the same as the concentration of the bottom liquid ammonia water inthe reaction process, continuously reacting to obtain a precursor material, grinding and mixing the precursor material and LiOH.H2O, and sintering to obtain the lithiated ternary material. The prepared NCM622 material is good in morphology, complete in crystal structure and uniform in element distribution, the material has high discharge capacity, good cycling stability and rate capability, and atotal battery matched with graphite and a Si/C negative electrode also has good electrochemical performance.
Owner:CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI

Four-roller flame laminating machine

The invention discloses a four-roller flame laminating machine. The four-roller flame laminating machine comprises a sponge unwinding device, a fabric unwinding device, a backing material unwinding device, a rack, a four-roller laminating device, and a cooling winding device; the sponge unwinding device unwinds sponge serving as a flame laminating medium, the fabric unwinding device unwinds fabric, the backing material unwinding device is mounted on the rack, and the four-roller laminating device comprises a four-roller bracket, a first pressing roller, a second pressing roller, a third pressing roller, a fourth pressing roller, a front flame row, a rear flame row, an air cylinder overturning device, and a flame row regulator; the second pressing roller is located under the first pressingroller, the third pressing roller is located on the right lower side of the second pressing roller and is close to the second pressing roller, the fourth pressing roller is located under the third pressing roller and is close to the third pressing roller, the front flame row parallel to the first pressing roller is arranged on the lower left side of the first pressing roller, and the rear flame row parallel to the third pressing roller is arranged on the lower right side of the third pressing roller; and a three-in-one laminating material laminated by the four-roller laminating device enters the cooling winding device. According to the four-roller flame laminating machine, the laminating quality can be improved, and the four-roller flame laminating machine is suitable for laminating of various materials.
Owner:JIANGSU HONGYE MACHINERY

Bidirectional power device and manufacturing method thereof

The invention discloses a bidirectional power device and a manufacturing method thereof. The bidirectional power device comprises: a semiconductor layer; a first doped region, which is located in thesemiconductor layer; a plurality of trenches of a first trench region, wherein the trenches are located in the first doped region and divide the first doped region into alternating first-type sub-doped regions and second-type sub-doped regions; a gate dielectric layer, that covers the side walls of the lower parts of the plurality of trenches of the first trench region; a shielding dielectric layer, that covers the side walls of the upper parts of the plurality of trenches of the first trench region; and grid conductors, which are located in the plurality of trenches of the first trench regionand make contact with the grid dielectric layer and the shielding dielectric layer separately, wherein each grid conductor comprises a control grid and a shielding grid which are connected, the control grid makes contact with the grid dielectric layer, the shielding grid makes contact with the shielding dielectric layer, the thickness of the shielding dielectric layer is inconsistent, and the thickness of at least a part of the shielding dielectric layer is greater than the thickness of the gate dielectric layer. According to the device, the voltage withstanding performance of the device is improved through the setting that the thickness of at least a part of the shielding dielectric layer is greater than the thickness of the gate dielectric layer.
Owner:HANGZHOU SILAN MICROELECTRONICS

Gradient type microporous broadband wave-absorbing material and supercritical limited foaming type preparation method thereof

The invention provides a gradient type microporous broadband wave-absorbing material and a supercritical limited foaming type preparation method thereof. The gradient type microporous broadband wave-absorbing material comprises at least two layers of microporous wave-absorbing materials which are stacked, wherein the microporous wave-absorbing material is prepared from a wave-absorbing medium, a polymer base material and a nucleating agent through compression molding and supercritical carbon dioxide integrated limited foaming. According to the invention, a wave-absorbing medium, a polymer basematerial and a nucleating agent are compounded through supercritical carbon dioxide integrated limited foaming to prepare a gradient type microporous broadband wave-absorbing material, multi-band broadband absorption can be achieved by utilizing the structure and the wave-absorbing performance of the wave-absorbing medium and the synergistic effect formed by the wave-absorbing medium and the gradient type microporous structure, and the gradient type microporous broadband wave-absorbing material has the characteristics of simple preparation method, low cost, wide wave-absorbing frequency bandand good wave-absorbing frequency band regulation and control flexibility.
Owner:WUHAN TEXTILE UNIV

Dyeing process of chinlon and cotton lace

InactiveCN107740260AImprove gross effectSolve the problem that if the dye is not transparent, it will be whiteDyeing processYarnNeutral ph
The invention discloses a dyeing process of a chinlon and cotton lace. The dyeing process of the chinlon and cotton lace is mainly characterized in that a cotton pretreatment process, PH before activedyeing, a high-temperature migration temperature and time and soda ash adding time are controlled, the using amount of an auxiliary is selected, and the temperature of a dyeing bath and temperature keeping time are selected, so that a reasonable dyeing process is optimized, the problem of exposure of coarse folded yarns of the chinlon and cotton lace is solved, and a new idea and a new directionare provided for the type of products. According to the dyeing process of the chinlon and cotton lace, tea saponin, flake alkali, hydrogen peroxide and a refining agent are used for improving the wooleffect of cotton in a pretreatment process of cotton, so that the permeability of reactive dyes is enhanced. By adopting the dyeing process of the chinlon and cotton lace, the active dyeing temperature is raised to 95 to 98 DEG C, and the dye diffusion time is prolonged. After high-temperature migration, the temperature is lowered and soda ash is added fractionally to fix the dyes, so that migration of the dyes is facilitated, the permeability of the dyes is enhanced, and the problem of folded yarn exposure during dyeing is solved; moreover, high-temperature migration under a neutral PH condition does not cause hydrolysis of the reactive dyes, so that the color depth does not decline.
Owner:FUJIAN HANGGANG TEXTILE TECH CO LTD

High-efficiency anti-clogging cyclone combined jet aeration device

The invention discloses a high-efficiency anti-clogging cyclone combined jet aeration device. The jet aeration device comprises a gaseous phase pipe, a liquid phase pipe, a water inlet end, a gas inlet end, a water chamber, a gas chamber, hydraulic ejectors, gas-liquid ejectors and a gas-liquid cyclone structure, wherein multiple groups of concentric hydraulic ejectors and gas-liquid ejectors are arranged on the side of the gaseous phase pipe and the side of the liquid phase pipe; the liquid phase pipe is connected with the water inlet end; the water inlet end is connected with the water chamber; the hydraulic ejectors are arranged at the end part of the water chamber; the gaseous phase pipe is connected with the gas inlet end; the gas inlet end is arranged on the side of the gas chamber; the gas-liquid ejectors are arranged at the end part of the gas chamber; the water chamber and the hydraulic ejectors are coaxial and are arranged in the gas chamber and the gas-liquid ejectors along the same direction. According to the high-efficiency anti-clogging cyclone combined jet aeration device disclosed by the invention, tapers and ejection orifices of the hydraulic ejectors and the gas-liquid ejectors are optimized, gas-liquid rapid mixed cutting and spiral jetting in the gas chamber are realized, the oxygenation diffusion capacity of jet flows is improved, and double functions of pushing flow and diffusion are realized.
Owner:宜兴市荣盛达环保有限公司

Solar power generation apparatus

The invention discloses a solar power generation apparatus. The solar power generation apparatus comprises thin film solar cells, N type semiconductors, P type semiconductors, a heat conducting base, a storage battery unit, a controller unit, temperate sensors, a water pump, electronic control valves, water pipes, electric telescopic rods, a supporting column, a control box, a threaded telescopic rod, a supporting bottom plate and a sensing head, wherein the N type semiconductors and the P type semiconductors are both I-shaped; spray headers are arranged in the water storage cavity of the heat conducting base; the two electric telescopic rods and the supporting column support between the heat conducting base and the supporting bottom plate; the N type semiconductors and the P type semiconductors are arranged at intervals, and the adjacent N type semiconductors and the P type semiconductors are connected in series; the multiple thin film solar cells are connected in series, and then are connected with the N type semiconductors and the P type semiconductors in series; and finally, the thin film solar cells charge the storage battery unit. According to the solar power generation apparatus, the solar power generation and the thermoelectric power generation are effectively combined; and a quite effective technical scheme utilizing the solar energy and the geothermal energy is provided, so that the solar power generation apparatus is higher in power generation efficiency.
Owner:孙啸

Manufacturing method of bidirectional power device

The invention discloses a manufacturing method of a bidirectional power device. The manufacturing method comprises the following steps: forming a first doped region in a semiconductor layer; forming aplurality of trenches in the first trench region, wherein the plurality of trenches of the first trench region are located in the first doped region and divide the first doped region into alternatingfirst-type sub-doped regions and second-type sub-doped regions; forming a gate dielectric layer covering the side walls of the lower parts of the plurality of trenches of the first trench region; forming control gates which are in contact with the gate dielectric layer at the lower parts of the plurality of trenches of the first trench region; forming a shielding dielectric layer, wherein the shielding dielectric layer covers the upper side walls of the plurality of trenches of the first trench region and the surfaces of the control gates; and forming shield gates which are in contact with the shield dielectric layer on the upper portions of the plurality of trenches of the first trench region, wherein the shield dielectric layer separating the control gates from the shield gates. According to the manufacturing method, the first doped region is divided into the first-type sub-doped regions and the second-type sub-doped regions which are alternated by the trenches to form a source region and a drain region of the bidirectional power device, so the area of the device is reduced.
Owner:HANGZHOU SILAN MICROELECTRONICS

Solar power device

The present invention discloses solar power device. The solar power device comprises solar energy cells, N-type semiconductors, P-type semiconductors, a heat conduction pedestal, a storage battery unit, a controller unit, a temperature sensor, a water pump, a electronic control valve, a water pipe, electric expansion links, a supporting column, a control box, a supporting tube, a supporting base plate and a sensing head. The N-type semiconductors and the P-type semiconductors are I-shaped; diversion baffle plates are alternately arranged in the water storage cavity of the heat conduction pedestal; the two electric expansion links and a supporting column are supported between the heat conduction pedestal and the supporting base plate; N-type semiconductor and the P-type semiconductor are arranged at intervals, and each adjacent N-type semiconductor and P-type semiconductor are connected in series; and a plurality of thin-film solar energy cells is connected in series, connected in series with the N-type semiconductors and the P-type semiconductors, and is configured to charge the storage battery unit. Through effective combination of solar power generation and thermoelectric power generation, the solar power device provides a very effective technical scheme by employing solar energy and geothermal energy so as to improve generation efficiency.
Owner:孙啸

Chip of reverse blocking IGBT and manufacturing method

The invention relates to a chip of a reverse blocking IGBT and a manufacturing method. According to the chip and the manufacturing method, hole grooves are formed in the edge of the chip to make contact with a collector P+ area on the back of the chip; and by adoption of physical gas deposition, the chip is put in gas which is full of boron ions to ensure that the boron ions are transversely diffused along the inner walls of the hole grooves until diffusion knots between the hole grooves make contact so as to form a diffusion and isolation area around a terminal area. Different from the conventional reverse blocking IGBT, the method adopts a diffusion method to manufacture the isolation area, so that the diffusion time is short, the operation is not influenced by the thickness of a substrate, the usable area of the isolation area is few and the chip area utilization rate is high. The bottoms of the hole grooves make contact with the collector P+ area on the back, so that the difficultythat the bottom of the diffusion and isolation area is difficult to make contact with the collector on the back as the substrate of a high-voltage device is relatively thick, and the diffusion knotsbetween the hole grooves make contact to form the overall diffusion P+ area so that the terminal area of the chip is isolated from the edge of the chip and then the edge of the chip is avoided from leakage current generation.
Owner:BEIJING UNIV OF TECH

Neodymium-iron-boron permanent magnet material prepared from Dy and preparation method of neodymium-iron-boron permanent magnet material

The invention provides a neodymium-iron-boron permanent magnet material prepared from Dy and a preparation method of the neodymium-iron-boron permanent magnet material. The preparation method comprises the following steps that the surface of a neodymium-iron-boron regenerated magnet sample is coated with a layer of Dy element powder, and sintering is carried out in a vacuum sintering furnace, so that the Dy element diffuses on the Nd2Fe14B phase grain boundary, and finally, the neodymium-iron-boron permanent magnet material with a shell structure is formed. The Dy is diffused in the neodymiumiron boron grain boundary to synthesize the permanent magnet material with more excellent performance. The surface of the neodymium-iron-boron regenerated magnet is coated with the layer of Dy elementpowder; and sintering is carried out in the vacuum sintering furnace, so that the Dy element is diffused on the Nd2Fe14B phase grain boundary to synthesize the permanent magnet material with the core-shell structure in which the Nd2Fe14B phase wrapped by the heavy rare earth, and the coercive force, the magnetic energy product, the Curie temperature and the like of the neodymium-iron-boron regenerated magnet can be remarkably improved.
Owner:GUILIN UNIV OF ELECTRONIC TECH
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