Semiconductor laser device non-absorption window and preparation method thereof, and semiconductor laser device

A laser and non-absorbing technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of reducing device reliability, increasing production costs, and long diffusion time, so as to reduce reliability, increase costs, and long diffusion time Effect
CN110086080AActive Publication Date: 2019-08-02SUZHOU EVERBRIGHT PHOTONICS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SUZHOU EVERBRIGHT PHOTONICS CO LTD
Publication Date
2019-08-02

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Abstract

The invention discloses a semiconductor laser device non-absorption window and a preparation method thereof, and a semiconductor laser device. The preparation method comprises steps that a diffusion source is grown in a to-be-diffused region of a semiconductor laser wafer, and a wafer grown with the diffusion source is annealed in the arsenic atmosphere and bombardment ion environment containing aradio frequency electric field to form the non-absorption window. Under the action of the RF electric field, the bombardment ions bombard a surface of the wafer, vacancy defects are created inside the diffusion source without a protective layer, the rich-As atom environment facilitates diffusion of Ga and Al atoms in the epitaxial layer into the diffusion source, the Ga and Al atoms are combinedwith As atoms inside the diffusion source while vacancies are left in the epitaxial layer, increase of the vacancies in the epitaxial layer can promote downward diffusion of impurities, concentrationand depth of downward diffusion of the impurities are improved, the diffusion temperature and the diffusion time are reduced, device reliability is improved, and manufacturing cost is reduced.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor lasers, in particular to a non-absorbing window of a semiconductor laser, a preparation method thereof, and a semiconductor laser. Background technique

[0002] Catastrophic optical mirror damage (COMD, Catastrophic optical mirror damage) of semiconductor lasers is the main factor that limits the power output of semiconductor lasers and affects the life of devices. COMD is because impurities or dislocations on the cavity surface will absorb laser light, resulting in local energy excess. High, the increase of temperature will lead to the shrinkage of the band gap of the semiconductor material, and the photon absorption will be stronger. When the temperature continues to rise, a vicious circle will be formed, which will eventually lead to the generation of COMD. The non-absorbing window structure is to use a material with a wider energy bandgap than the substrate material to form a window area...

Claims

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