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Semiconductor element reliability evaluation device and semiconductor element reliability evaluation method

A technology for evaluating devices and semiconductors, which can be used in single semiconductor device testing, semiconductor working life testing, measuring devices, etc., and can solve problems such as semiconductor component damage

Pending Publication Date: 2021-02-05
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If radiation from cosmic rays is received while semiconductor elements are held at high voltage, semiconductor elements may be destroyed

Method used

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  • Semiconductor element reliability evaluation device and semiconductor element reliability evaluation method
  • Semiconductor element reliability evaluation device and semiconductor element reliability evaluation method
  • Semiconductor element reliability evaluation device and semiconductor element reliability evaluation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0033] figure 1 It is a block diagram of the reliability evaluation apparatus of the semiconductor element of Embodiment 1.

[0034] The semiconductor elements 1 - 1 to 1 -N to be tested are MOSFETs, IGBTs, or the like. The semiconductor elements 1 - 1 to 1 -N are not limited to self-arc-extinguishing elements, and may be rectifying elements such as PiN diodes or Schottky barrier diodes. The material of the semiconductor element is not limited to general Si, and may be SiC, GaN, Ga203, diamond, etc. with a large band gap.

[0035] exist figure 1 In , N self-arcing type semiconductor elements 1 - 1 to 1 -N are shown. The semiconductor element 1-1 is referred to as a first test object semiconductor element, and the semiconductor element 1-N is referred to as an Nth test object semiconductor element. The test circuit 2 is configured by connecting the semiconductor elements 1 - 1 to 1 -N in parallel. The same voltage is applied to the semiconductor elements 1-1 to 1-N. The r...

Embodiment approach 2

[0062] In Embodiment 2, the analyzer 6 performs analysis processing on the analysis item B. FIG. Analysis item B is the duration of the pulse. The duration of the pulse corresponds to the temporal width of the pulse. The duration of the pulse can be set to the time from when the leakage current exceeds the determined threshold to when the leakage current falls to the determined threshold.

[0063] Figure 4 It is a figure for explaining analysis item B. exist Figure 4 The pulse waveform 40 of the leakage current measured by the measuring device 5 is shown as an example in . exist Figure 4 Among them, the horizontal axis represents the time t, and the vertical axis represents the magnitude of the leakage current I.

[0064] At time 0 on the time axis, the leakage current I exceeds the first threshold It0. As a result, the measuring device 5 records the waveform. It0 may be the same value as It in the first embodiment. The leakage current changes in a pulse shape. Th...

Embodiment approach 3

[0072] In Embodiment 3, the analyzer 6 performs analysis processing on the analysis item C. Analysis item C is the frequency of pulse generation. The pulse generation frequency can be set to the number of pulses in which the leakage current I exceeds the determined threshold value generated per unit time.

[0073] Figure 6 It is a figure for explaining analysis item C. exist Figure 6 The pulse waveform 40 of the leakage current measured by the measuring device 5 is shown as an example in . The horizontal axis represents time t, and the vertical axis represents leakage current I. At time 0 on the time axis, the leakage current I exceeds the threshold It. As a result, the measuring device 5 records the waveform. The analyzer 6 calculates the generation frequency of pulses per unit time based on the number of recorded waveforms. Even if the leakage current I fluctuates instantaneously, in such as Figure 6 When the leakage current I does not exceed the threshold value I...

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Abstract

In the present invention, a DC power supply (3) applies a DC voltage to semiconductor elements (1-1)-(1-N) to be tested. A current detection unit (4) detects leakage current from a test circuit (2) comprising the semiconductor elements (1-1)-(1-N) to be tested. A measurement instrument (5) records leakage current pulse waveforms. An analysis device (6) analyzes the reliability of the semiconductorelements (1-1)-(1-N) to be tested included in the test circuit (2) on the basis of the recorded pulse waveforms.

Description

technical field [0001] The invention relates to a reliability evaluation device of a semiconductor element and a reliability evaluation method of a semiconductor element. Background technique [0002] Semiconductor elements such as power MOSFET (Metal-Oxide-Semiconductor-Field-Effect Transistor: Metal-Oxide-Semiconductor Field-Effect Transistor) or IGBT (Insulated Gate Bipolar Transistor: Insulated Gate Bipolar Transistor) can perform power such as inverter operation. Change action. In the inverter operation, the semiconductor element maintains a high DC voltage for a long time, and generates an AC voltage from the DC voltage through switching operations. On the other hand, in nature, there are often radiations such as electromagnetic waves or particle rays originating from cosmic rays. If the semiconductor element receives radiation from cosmic rays while the semiconductor element is held at a high voltage, the semiconductor element may be destroyed. Such a destruction p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01N17/00G01N27/00G01R31/30
CPCG01R31/2642G01N17/00G01R31/26G01R31/3008G01R31/317
Inventor 河原知洋和田幸彦
Owner MITSUBISHI ELECTRIC CORP
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