A kind of anti-mixing light semiconductor laser and its preparation method

Abstract

The invention provides an anti-mixing semiconductor laser and a preparation method thereof. The semiconductor laser includes a substrate, and the semiconductor laser also includes a metal layer arranged on the substrate, a silicon oxide compound filled between adjacent metals, and sequentially arranged An ALD film layer, an insulating dielectric layer, a PMMA layer and an active layer on a metal layer and a structural layer filled with a silicon oxide compound, and an annular hole penetrating through the ALD film layer, the insulating dielectric layer and the PMMA layer is formed in the semiconductor laser cavity, and a reflective film layer is arranged in the annular cavity. The silver film in the annular cavity of the present invention is used as the optical resonant cavity of the laser. Because the reflectivity of the silver film layer is very high, when the light diffuses, the light will be reflected back due to the presence of silver, thereby controlling the light from spreading to the adjacent external space. This results in mixed light, uneven luminescence, and low brightness.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to an anti-mixing light semiconductor laser and a preparation method thereof. Background technique [0002] Semiconductor lasers have the characteristics of high efficiency, small size, light weight, long life, simple manufacture, and low cost; they have obtained patents in laser printing, laser ranging, laser radar, optical fiber communication, infrared lighting, atmospheric monitoring, and chemical spectroscopy. Wide range of applications. In the early days, semiconductor lasers usually used photonic crystal microcavities or dielectric cavities formed by coating multiple layers of high-reflective dielectric films on both ends of the active layer as optical resonators. In 2007, the theoretical research results of A.V.Maslov and C.Z.Ning showed that metal cavities have stronger localization ability to electromagnetic wave modes than dielectric cavities, so they believe...

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Problems solved by technology

Although this manufacturing method is simple, the height of the metal mirror is limited by the thickness of the semiconductor material, resulting in a large loss in the metal cavity and a higher oscillation threshold of the laser.

[0004] Furthermore, since the light is emitted from various angles, the light will diffuse, resulting in mixed light, uneven light emission, low brightness and other phenomena that affect the effect.

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