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Purification method of nonmetal semiconductor material

A technology of non-metallic materials and purification methods, which is applied in the field of preparation of high-purity materials, can solve problems such as difficult removal of impurities, and achieve the effects of high degree of equipment integration, simple methods, and easy control

Active Publication Date: 2021-03-02
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional methods, impurities with similar properties are difficult to remove

Method used

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  • Purification method of nonmetal semiconductor material
  • Purification method of nonmetal semiconductor material
  • Purification method of nonmetal semiconductor material

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Embodiment Construction

[0047] Inject the gasified purified material into the metal melt. Theoretically, the saturated vapor pressure of the two elements must be different. After reducing the ambient pressure, the purified element will volatilize from the melt; The speed is slow. During the volatilization of the purified elements, impurities will remain in the melt, or only part of the elements will be emitted. Purification of the material can be achieved by recovering the volatilized elements. The present invention is exactly the equipment and the method that design out according to above-mentioned principle.

[0048] Equipment composition.

[0049] see figure 1 with figure 2 , the purification equipment of non-metallic materials, including a sealed furnace body 1, and a balance pressure valve 2 arranged on the side of the furnace body 1.

[0050] The sealing of the furnace body 1 can maintain the environmental parameters in the purification process. After the purification is completed, the fu...

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Abstract

The invention discloses a purification method of a non-metal semiconductor material, relates to the field of preparation of high-purity materials, is particularly suitable for preparation of high-purity non-metal materials, and particularly relates to equipment and a method for purifying volatile non-metal materials through metal melt. Based on purification equipment, the equipment comprises a furnace body, a balance pressure valve, a crucible arranged in the middle of the lower part of the furnace body, a heating and supporting structure of the crucible, a liftable injection mechanism arranged right above the crucible, and a liftable and rotatable recovery mechanism arranged beside the liftable injection mechanism, the method comprises the following steps: injecting a gasified non-metallic material into a metal melt in a high-pressure environment; reducing the environmental pressure, and collecting bubbles volatilized from the metal melt to obtain the purified non-metallic material. By adopting the technical scheme provided by the invention, impurities, especially elements with similar properties, in the non-metal material can be effectively removed, the equipment integration degree is high, the control is easy, and the method is simple.

Description

technical field [0001] The invention relates to the field of preparation of high-purity materials, and is especially suitable for the preparation of high-purity non-metallic materials, especially equipment and methods for purifying volatile non-metallic materials through metal melts. Background technique [0002] Phosphorus, sulfur, and arsenic are important semiconductor raw materials, which can be used to prepare semiconductor materials such as indium phosphide, gallium phosphide, gallium arsenide, and molybdenum disulfide, which play an important role in the national economy. The manufacture of semiconductor materials requires high purity of semiconductor raw materials, generally reaching more than 99.999%. [0003] Semiconductor raw materials generally contain Fe, Ca, Co, Mg, Cr, Cd, Mn, Ni, Cu, Pb, Zn, Al and other impurity elements. [0004] Taking phosphorus as an example, in the field of phosphorus purification, the traditional industrial preparation methods are: su...

Claims

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Application Information

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IPC IPC(8): C01B25/04C01B17/02C22B9/02C22B30/04
CPCC01B25/04C01B17/0232C22B30/04C22B9/02Y02P10/20Y02P20/10
Inventor 王书杰孙聂枫刘惠生孙同年徐森锋史艳磊邵会民付莉杰姜剑王阳李晓岚
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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