Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps: providing a substrate; forming a discrete core layer on the substrate,wherein the core layer to be removed serves as a pseudo core layer; forming a sacrificial side wall on the side wall of the core layer; forming a mask side wall on the side wall of the sacrificial side wall; removing the sacrificial side walls; after the sacrificial side walls are removed, removing the pseudo core layer; and patterning the substrate by taking the mask side wall and the residual core layer as masks. According to the embodiment of the invention, the process difficulty of removing the pseudo core layer is reduced, and the process window of removing the pseudo core layer is enlarged.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] In semiconductor manufacturing, with the development trend of ultra-large-scale integrated circuits, the feature size of integrated circuits continues to decrease. In order to adapt to smaller feature sizes, metal-oxide-semiconductor field-effect transistors (Metal-Oxide-Semiconductor Field-Effect Transistor , MOSFET) channel length has been shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the ability of the gate structure to control the channel becomes worse, and the gate voltage pinches off the channel. The channel becomes more and more difficult, making subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE:...

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Problems solved by technology

However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the ability of the gate structure to control the channel becomes worse, and the gate voltage pinches off the channel. The difficulty of the channel is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur

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