High-quality four-junction space solar cell and preparation method thereof

A solar cell, high-quality technology, applied in the field of solar photovoltaic power generation, to achieve the effects of improving material quality, reducing minority carrier recombination rate, and high open circuit voltage

Active Publication Date: 2021-03-05
ZHONGSHAN DEHUA CHIP TECH CO LTD
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Problems solved by technology

Under the current production conditions, the existence of impurities such as water and oxygen is difficult to completely eli

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  • High-quality four-junction space solar cell and preparation method thereof
  • High-quality four-junction space solar cell and preparation method thereof
  • High-quality four-junction space solar cell and preparation method thereof

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Embodiment Construction

[0035] The present invention will be further described below in conjunction with specific examples.

[0036] Such as figure 1 and figure 2 As shown, the present embodiment provides a high-quality four-junction space solar cell, including a Ge substrate, and the Ge substrate is a p-type Ge single wafer; A Ge subcell, a GaInP nucleation layer, a GaInAs buffer layer, a first tunnel junction, and an Al x Ga y In 1-x-y As composition graded buffer layer, DBR reflective layer, GaInAs subcell, second tunnel junction, AlGaInAs subcell, third tunnel junction and AlGaInP subcell; base and emitter regions of the AlGaInAs subcell and AlGaInP subcell A depletion layer is formed between them, and the base region and the emitter region are both bandgap graded structures. The bandgap of the base region decreases as its Al composition gradually decreases along the direction away from the substrate, while the bandgap of the emitter region decreases with its Al composition. The points grad...

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Abstract

The invention discloses a high-quality four-junction space solar cell and a preparation method thereof. The high-quality four-junction space solar cell comprises a Ge substrate, and a Ge sub-cell, a GaInP nucleating layer, a GaInAs buffer layer, a first tunneling junction, a component gradient buffer layer, a DBR reflection layer, a GaInAs sub-cell, a second tunneling junction, an AlGaInAs sub-cell, a third tunneling junction and an AlGaInP sub-cell are sequentially arranged on the Ge substrate. Depletion layers are formed between base regions and emitter regions of the AlGaInAs sub-cell and the AlGaInP sub-cell, the base regions and the emitter regions are of band gap gradual change structures, and the band gap gradual change structures are introduced into the Al-containing sub-cell, so that the material quality of the depletion layers is improved, the minority carrier recombination rate of a main photon-generated carrier generation region is reduced, and the photon-generated carriercollection efficiency is improved. The gradual change band gap has the effect of an auxiliary back field, so that photon-generated carriers far away from the depletion layer drift towards the depletion layer, the Al component far away from the depletion layer enables the effective band gap of the Al-containing sub-cell to be wider, and higher open-circuit voltage can be obtained.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic power generation, in particular to a high-quality four-junction space solar cell and a preparation method thereof. Background technique [0002] Forward-mismatched AlGaInP / AlGaInAs / GaInAs / Ge four-junction solar cells are based on forward-mismatched triple-junction cells. By developing large-mismatched GaInAs sub-cells, introducing high Al composition AlGaInAs sub-cells, and wide-bandgap AlGaInP sub-cells, not only optimized It not only improves the comprehensive utilization of the solar spectrum, but also improves the utilization efficiency of the single-band spectrum, and finally realizes the improvement of the overall performance of the product, and obtains a forward-mismatched four-junction solar cell with an efficiency of more than 34%. At the same time, compared with the three-junction battery, the radiation resistance of the four-junction battery is significantly improved, especia...

Claims

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Application Information

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IPC IPC(8): H01L31/0304H01L31/0352H01L31/0687H01L31/18
CPCH01L31/0687H01L31/03046H01L31/03042H01L31/03529H01L31/1808H01L31/1844H01L31/1852Y02P70/50
Inventor 黄珊珊刘建庆黄辉廉刘恒昌刘雪珍杨文奕
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
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