A deep ultraviolet light-emitting device in which p-type regions are grown side by side in quantum well regions and its preparation method
A technology for quantum well regions and light-emitting devices, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of single hole injection path, high production requirements, complex stripping process, etc., to avoid premature recombination, The effect of improving light output and reducing process difficulty
Active Publication Date: 2021-11-23
SOUTH CHINA NORMAL UNIVERSITY
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The chip hole injection path of these two structures is single, and the luminous efficiency is low
The vertical structure usually adopts substrate lift-off technology to remove the substrate and buffer layer, and the chip has good heat dissipation, but its complicated lift-off process will put higher requirements on production
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0031] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings of the present invention, and the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without making creative efforts all belong to the protection scope of the present invention.
[0032] The present invention will be described in further detail below. The invention provides a deep ultraviolet light-emitting device in which the P-type region is grown side by side with the quantum well region, such as figure 1 As shown, the light-emitting device includes a substrate 1, a buffer layer 2 and an N-type AlGaN layer 3 stacked on the substrate 1 in sequence, and a P-type region and a quantum well region are arranged side by side on the surface of the N-type ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a deep ultraviolet light-emitting device in which P-type regions are grown side by side in quantum well regions and a preparation method thereof. The p-type region and the quantum well region, the p-type region includes the current blocking layer stacked in sequence, the p-type AlGaN superlattice structure and the p-type GaN layer, and the surface of the p-type AlGaN superlattice structure adjacent to the p-type GaN layer is flush with the quantum surface of the well. The p-type AlGaN superlattice structure is arranged side by side with the quantum well region, so that holes at each position can directly enter the quantum well region at the growth position, and can move to any position in the entire quantum well region to participate in recombination without Participate in recombination step by step to improve the hole injection efficiency. In addition, the p-type GaN layer is arranged in the non-quantum well area, which reduces the absorption of deep ultraviolet light by the p-type GaN layer and improves the overall light output.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a deep ultraviolet luminescent device in which a P-type region grows side by side with a quantum well region and a preparation method thereof. Background technique [0002] Deep ultraviolet light-emitting devices have broad application prospects in the field of disinfection and sterilization due to their advantages of environmental protection, high efficiency, energy saving, longevity, and low cost. At present, deep ultraviolet light-emitting devices use AlGaN-based materials as the main material of the chip epitaxial structure. The device mainly includes two structures: lateral and vertical. The electrodes are respectively arranged on the n-type layer and the n-type layer. During operation, the p-type layer injects holes into the quantum well region, and the n-type layer injects electrons into the multi-quantum well region, and the electrons and holes radiate and reco...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/12H01L33/14H01L33/00
CPCH01L33/007H01L33/06H01L33/12H01L33/145
Inventor 尹以安张珂铭章勇
Owner SOUTH CHINA NORMAL UNIVERSITY