Lamb wave resonator with POI structure and manufacturing method of Lamb wave resonator

A Lamb wave resonator and manufacturing method technology, applied in the direction of electrical components, impedance networks, etc., can solve the complex problems of the RF front end of 5G mobile phones, and achieve the effect of being suitable for large-scale production, simple production process, and Q value suppression

Pending Publication Date: 2021-03-16
GUANGDONG CANCHIP TECH CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] The 5G era is now open. Due to the new frequency band of 5G, the RF front-end of 5G mobile phones has new changes. At the same time, considering that 5G mobile phones will continue to be compatible with 4G, 3G, and 2G standards, the RF front-end of 5G mobile phones is extremely complicated.
Therefore, 5G technology puts forward lower loss, higher frequency and larger bandwidth requirements for filters, which poses a serious challenge to existing technologies, because these technologies are usually limited by spurious effects

Method used

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  • Lamb wave resonator with POI structure and manufacturing method of Lamb wave resonator
  • Lamb wave resonator with POI structure and manufacturing method of Lamb wave resonator
  • Lamb wave resonator with POI structure and manufacturing method of Lamb wave resonator

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Embodiment Construction

[0031] Hereinafter, the present invention will be described more specifically by referring to specific embodiments shown in the accompanying drawings. Various advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the specific embodiments. It should be understood, however, that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. The following embodiments are provided for a more thorough understanding of the present invention. Unless otherwise specified, the technical terms or scientific terms used in the application shall have the ordinary meanings understood by those skilled in the art to which the application belongs.

[0032] The following combination figure 1 , 2 , 3 Details the Lamb wave resonator with the intermediate layer according to the present invention.

[0033] figure 1 is a schematic diagr...

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Abstract

The invention provides a Lamb wave resonator with a POI structure and a manufacturing method of the Lamb wave resonator. The resonator includes at least one reflective layer including a high acousticvelocity substrate and a low acoustic velocity dielectric layer on the substrate, a piezoelectric layer bonded together with the dielectric layer on a side opposite the substrate, and an electrode onthe piezoelectric layer. The manufacturing method comprises the steps of providing a piezoelectric layer, and forming an IDT electrode on the piezoelectric layer; providing a substrate, and depositinga dielectric layer on the substrate; and performing low-temperature bonding on the dielectric layer and the piezoelectric layer. According to the invention, a Lamb wave S0 mode is excited, a high-frequency, high-bandwidth and low-insertion-loss Lamb wave resonator is realized, and the design requirements of high frequency, high electromechanical coupling coefficient, high Q value, low TCF value,no stray and the like are met at the same time.

Description

technical field [0001] The invention relates to the field of mobile communication, in particular to an acoustic wave resonator / filter in a radio frequency front end of a mobile phone. Background technique [0002] Generally speaking, the radio frequency front-end (RFFE) of a mobile phone is the functional area between the radio frequency transceiver and the antenna of a smartphone, which consists of power amplifiers, antenna switches, filters, duplexers, and low-noise amplifiers. [0003] Among them, mainstream filters generally include Surface Acoustic Wave (SAW), Bulk Acoustic Wave (BAW), and Film Bulk Acoustic Wave (FBAR) filters. [0004] The 5G era is now open. Due to the new frequency band of 5G, the RF front-end of 5G mobile phones has new changes. At the same time, considering that 5G mobile phones will continue to be compatible with 4G, 3G, and 2G standards, the RF front-end of 5G mobile phones is extremely complicated. Therefore, 5G technology puts forward lower l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/145H03H9/25
CPCH03H9/02H03H9/145H03H9/25
Inventor 许欣李红浪柯亚兵
Owner GUANGDONG CANCHIP TECH CO LTD
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