Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a to-be-etched layer; forming a first sacrificial material layer onthe to-be-etched layer; forming a first stop material layer on the first sacrificial material layer, wherein the material of the first stop material layer is different from the material of the first sacrificial material layer, and the material of the first stop material layer is different from the material of the surface of the to-be-etched layer; forming a graphical layer on the first stop material layer, wherein the graphical layer exposes a part of the surface of the first stop material layer; etching the first stop material layer and the first sacrificial material layer by taking the graphical layer as a mask, and forming a first sacrificial layer on the to-be-etched layer and a first stop layer located on the first sacrificial layer; and removing the first stop layer. With the method,the performance of the semiconductor structure is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the increasing demand for high-capacity semiconductor storage devices, the integration density of semiconductor storage devices has attracted people's attention. In order to increase the integration density of semiconductor storage devices, many different methods have been used in the prior art. Self-aligned multiple patterns Technology is a solution that is widely accepted and applied in the fabrication of semiconductor devices. [0003] Currently commonly used self-aligned multiple patterning techniques include self-aligned double patterning (SADP for short) and self aligned quadruple patterning (SAQP for short). Self-aligned multiple patterning technology can prepare devices with smaller nodes under the existing photolithography technology to provide smaller process fluctuatio...

AI Technical Summary

Problems solved by technology

[0004] However, the existing self-aligned multiple patterning technology must introduce complex film layer stacking to realize the pattern transfer. When the target pattern is formed on the semiconductor substrate by etching the film layer, the quality of pattern transfer is prone to poor quality and the formed target pattern is distorted. issues that negatively affect the robustness of the device

[0005] Therefore, the performance of semiconductor devices formed using existing self-aligned multiple patterning techniques needs to be improved

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