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A method for characterizing samples

A technology for characterization and energy loss, applied in instruments, measuring devices, scientific instruments, etc., can solve problems such as complex operation and result analysis, poor characterization of TiN thickness, limited collection efficiency, etc.

Active Publication Date: 2021-10-08
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Furthermore, although the composition information measured by EDS and EELS can be used to clarify the general distribution of TiN, both EDS and EELS have complex problems in operation and result analysis, and EDS is limited by fluorescence, and EELS is limited by collection efficiency (Large pixels), neither can characterize the thickness of TiN well

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  • A method for characterizing samples
  • A method for characterizing samples
  • A method for characterizing samples

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Experimental program
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Embodiment 1

[0053] figure 2 A schematic flow chart of an optional realization of the characterization method of the sample provided in the embodiment of the present application, the characterization method of the sample is applied to a transmission electron microscope, such as figure 2 Said, said method comprises the following steps:

[0054] Step S201. Obtain a sample to be characterized, wherein the sample to be characterized includes a target layer and at least one non-target layer, and the material of the target layer is different from that of the non-target layer.

[0055] The sample to be characterized may be a three-dimensional bulk material comprising multiple layers or multiple materials. In the embodiment of the present application, the sample to be characterized includes a target layer and at least one non-target layer. The target layer is a substance that needs to be characterized finally, and the at least one non-target layer is respectively adjacent to the target layer, ...

Embodiment 2

[0068] image 3 A schematic flow diagram of an optional realization of the sample characterization method provided in the embodiment of the present application, the characterization method is applied to a transmission electron microscope, such as image 3 As shown, the method includes the following steps:

[0069] Step S301. Obtain a sample to be characterized, wherein the sample to be characterized includes a target layer and at least one non-target layer, and the material of the target layer is different from that of the non-target layer.

[0070] The implementation process and functions of step S301 are the same as the implementation process and functions of step S201 in the above embodiment.

[0071] Step S302, acquiring the first electron energy loss spectrum of the target layer and the second electron energy loss spectrum of the non-target layer.

[0072] In the embodiment of the present application, the difference between the thickness of the target layer when acquiri...

Embodiment 3

[0085] Figure 4 A schematic flow diagram of an optional realization of the sample characterization method provided in the embodiment of the present application, the method is applied to a transmission electron microscope, such as Figure 4 Said, said method comprises the following steps:

[0086] Step S401. Obtain a sample to be characterized, wherein the sample to be characterized includes a target layer and at least one non-target layer, and the material of the target layer is different from that of the non-target layer.

[0087] In some embodiments, the sample to be characterized may include: a channel hole (ChannelHole, CH) of a three-dimensional memory; the target layer includes titanium nitride formed on the sidewall of the channel hole CH, and the non- Target layers include high-K dielectrics (e.g., Al 2 o 3 ) and / or tungsten (W), the non-target layer is stacked on the side of the target layer facing or away from the channel hole CH, and the target layer and the non...

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Abstract

An embodiment of the present application provides a sample characterization method, the method is applied to a transmission electron microscope, comprising: obtaining a sample to be characterized, wherein the sample to be characterized includes a target layer and at least one non-target layer; according to the target layer The first electron energy loss spectrum and the second electron energy loss spectrum of the non-target layer determine the first energy loss interval; select the energy loss value in the first energy loss interval as the target operating parameter of the transmission electron microscope; Under the energy filtering mode of the microscope and the target working parameters, the electron beam generated by the transmission electron microscope is projected onto the surface of the target layer and each non-target layer to obtain the characterization image of the sample to be characterized; according to the characterization image, determine The characterization parameters of the target layer, wherein the characterization parameters include the thickness of the target layer and the spatial distribution of the target layer in the sample.

Description

technical field [0001] This application relates to the field of material testing, involving but not limited to a sample characterization method. Background technique [0002] At present, the characterization of titanium nitride (Titanium Nitride, TiN) mainly relies on transmission electron microscope (Transmission Electron Microscope, TEM) and its equipped X-ray energy spectrometer (Energy Dispersive Spectrometer, EDS) and electron energy loss spectrometer (Electron Energy Loss Spectroscopy, EELS). Among them, ordinary transmission electron microscope images and scanning transmission electron microscope (Scanning Transmission Electron Microscop, STEM) images can give interface structure and morphology information, but cannot give composition information. Therefore, it is necessary to combine EDS and EELS for joint characterization. [0003] However, in the related art, if there is a substance with similar mass-thickness contrast next to TiN, the boundary of TiN will be diff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/223G01N23/04G01N23/20091
CPCG01N23/04G01N23/20091G01N23/223
Inventor 刘军魏强民
Owner YANGTZE MEMORY TECH CO LTD