A method for characterizing samples
A technology for characterization and energy loss, applied in instruments, measuring devices, scientific instruments, etc., can solve problems such as complex operation and result analysis, poor characterization of TiN thickness, limited collection efficiency, etc.
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Embodiment 1
[0053] figure 2 A schematic flow chart of an optional realization of the characterization method of the sample provided in the embodiment of the present application, the characterization method of the sample is applied to a transmission electron microscope, such as figure 2 Said, said method comprises the following steps:
[0054] Step S201. Obtain a sample to be characterized, wherein the sample to be characterized includes a target layer and at least one non-target layer, and the material of the target layer is different from that of the non-target layer.
[0055] The sample to be characterized may be a three-dimensional bulk material comprising multiple layers or multiple materials. In the embodiment of the present application, the sample to be characterized includes a target layer and at least one non-target layer. The target layer is a substance that needs to be characterized finally, and the at least one non-target layer is respectively adjacent to the target layer, ...
Embodiment 2
[0068] image 3 A schematic flow diagram of an optional realization of the sample characterization method provided in the embodiment of the present application, the characterization method is applied to a transmission electron microscope, such as image 3 As shown, the method includes the following steps:
[0069] Step S301. Obtain a sample to be characterized, wherein the sample to be characterized includes a target layer and at least one non-target layer, and the material of the target layer is different from that of the non-target layer.
[0070] The implementation process and functions of step S301 are the same as the implementation process and functions of step S201 in the above embodiment.
[0071] Step S302, acquiring the first electron energy loss spectrum of the target layer and the second electron energy loss spectrum of the non-target layer.
[0072] In the embodiment of the present application, the difference between the thickness of the target layer when acquiri...
Embodiment 3
[0085] Figure 4 A schematic flow diagram of an optional realization of the sample characterization method provided in the embodiment of the present application, the method is applied to a transmission electron microscope, such as Figure 4 Said, said method comprises the following steps:
[0086] Step S401. Obtain a sample to be characterized, wherein the sample to be characterized includes a target layer and at least one non-target layer, and the material of the target layer is different from that of the non-target layer.
[0087] In some embodiments, the sample to be characterized may include: a channel hole (ChannelHole, CH) of a three-dimensional memory; the target layer includes titanium nitride formed on the sidewall of the channel hole CH, and the non- Target layers include high-K dielectrics (e.g., Al 2 o 3 ) and / or tungsten (W), the non-target layer is stacked on the side of the target layer facing or away from the channel hole CH, and the target layer and the non...
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Abstract
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