Nano-diamond polishing solution for SiC substrate processing and preparation method thereof

Abstract

The invention discloses a nano-diamond polishing solution for SiC substrate processing and a preparation method thereof, and belongs to the technical field of ultra-precision grinding and polishing. The polishing solution consists of the following raw materials in parts by weight: 50-85 parts of water; 0.5-15 part of diamond micro powder; 0.1-5 part of a dispersing agent; 0.1-5 part of a suspending agent; 1-40 parts of a lubricant; and 0.001-0.1 part of defoamer, wherein the particle size of the diamond micro-powder is 10-1000 nm, the ratio of the number of the wear-resistant abrasive particles to the number of the round abrasive particles in the diamond micro-powder is 1-15: 1, and the round abrasive particles are obtained when the roundness Fc is larger than 0.950, and wear-resisting abrasive particles are obtained when Fc is more than or equal to 0.900 and less than or equal to 0.950. According to the polishing solution, the morphology composition of the diamond micro-powder is controlled, the polishing efficiency is improved through the wear-resisting abrasive particles, the surface damage layer and roughness are repaired through the round abrasive particles, and thus polishingscratching is controlled.

Description

technical field [0001] The invention belongs to the field of ultra-precision grinding and polishing, and in particular relates to a nano-diamond polishing liquid for SiC substrate processing and a preparation method thereof. Background technique [0002] As a typical representative of the third-generation semiconductor materials, SiC has formed a global industrial chain of materials, devices and applications. Due to its excellent performance in high temperature, high frequency, radiation resistance, and high power applications, it is widely used in core industries such as national defense armaments, 5G mobile communications, energy Internet, new energy vehicles, and rail transit. The new generation of "golden track" in the semiconductor industry and the reputation of "green energy devices" that drive the energy revolution have catalyzed the hot spot of "the one who wins SiC wins the world". [0003] The purpose of polishing is to remove the scratches, pits and other mechani...

AI Technical Summary

Problems solved by technology

[0004] Usually polished using nano-SiO 2 Polishing fluid, nano SiO 2 The Mohs hardness is about 6.8, and the Mohs hardness of the SiC substrate is about 9.5. The hardness of the abrasive is much lower than the hardness of the workpiece, and the polishing efficiency is low. Therefore, the polishing time often takes several hours, which is the bottleneck restricting the entire processing time.

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