Electrode modification layer, memristor, and preparation and control methods of memristor

Abstract

The invention discloses an electrode modification layer, a memristor, and preparation and control methods of the memristor. The memristor comprises a substrate, a first electrode, the electrode modification layer, a metal oxide functional layer and a second electrode which are arranged from bottom to top, wherein the electrode modification layer comprises an organic matter electrode layer and a metal nanoparticle layer growing on the upper surface of the organic matter electrode layer; the metal nanoparticle layer is composed of metal nanoparticles; the material of the organic matter electrode layer is a catechol amino group type organic matter comprising a large number of amino groups and phenolic hydroxyl groups; the metal nanoparticles can be in electric contact with the metal oxide functional layer, so a local electric field at the position, corresponding to the metal nanoparticles, in the metal oxide functional layer is greatly enhanced, the randomness of formation and breakage of conductive filaments in the metal oxide functional layer is reduced, the modulation effect on on the on-off states of oxygen vacancy conductive filaments is achieved, the memristor is enabled to stably jump in a resistance state under the action of electric excitation, and the stability of the memristor and the consistency of key electrical parameters are improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more specifically relates to an electrode modification layer, a memristor and a preparation and control method thereof. Background technique [0002] Memristors are considered to be the fourth passive basic circuit element after resistors, capacitors, and inductors. The resistance value of a memristor changes with the amount of charge flowing through it, and it can maintain its resistance state when the current is turned off, thereby realizing the non-volatile information storage function. The research on the non-volatile information storage function of the memristor makes it applicable to high-density information storage or non-volatile state logic operation. [0003] At present, memristors based on the theory of conductive filaments have the advantages of simple structure, low power consumption, and fast reading and writing speeds, making them one of the most potential stor...

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Problems solved by technology

[0004] Aiming at the above defects or improvement needs of the prior art, the present invention provides an electrode modification layer, a memristor and a method for preparing and controlling the same, the purpose of which is to solve the problem of on-off of the conductive filaments in the existing memristor. The technical problem of poor consistency of memristor parameters due to randomness

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