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A flip-chip electrode and its manufacturing method

A manufacturing method and electrode technology, which are applied in the field of manufacturing to improve the performance of flip-chip electrodes, and can solve the problem of high electrode consumption

Active Publication Date: 2022-05-13
FUJIAN PRIMA OPTOELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the processing of chip-level packaging technology, traditional chip packaging equipment such as LED die-bonding machines and chip mounters generally use the method of piercing the blue film with thimbles in the separation of the chip and the blue film; the flip-chip structure product designed by this product The above-mentioned thimble performance verification needs to be carried out. In the prior art, the flip chip introduced by CN 201320549532.1 and CN 201320550892.3 all have the problem of high electrode consumption

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  • A flip-chip electrode and its manufacturing method
  • A flip-chip electrode and its manufacturing method
  • A flip-chip electrode and its manufacturing method

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Embodiment Construction

[0047] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0048] A method for manufacturing a flip-chip electrode, comprising the steps of,

[0049] Make the first layer of Cr layer; the Cr layer is used to achieve ohmic contact and enhance the adhesion with the substrate,

[0050] Make the second layer of AlCu alloy layer; the AlCu alloy layer is used to increase the reflectivity and reliability of the chip.

[0051] Three layers of Ti layer and Pt layer are alternately evaporated to form the TiPt composite layer of layers 3-8; the Ti layer can increase the adhesion between the metal layers, and the Pt layer is used to improve the aging ability.

[0052] Make the ninth Au layer; the Au layer can enhance the conductivity,

[0053] Evaporate the 10th Ti layer and the 11th Pt layer; the Ti l...

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Abstract

A flip-chip electrode and a manufacturing method thereof, wherein the method includes the steps of making the first layer of Cr layer; making the second layer of AlCu alloy layer; alternately vapor-depositing three layers of Ti layer and Pt layer to form the third-eighth layer TiPt composite layer; make the 9th Au layer; evaporate the 10th Ti layer and the 11th Pt layer; make the 12th Au layer; make the 13th Ti layer. The above technical solution can improve the performance of the flip-chip electrode chip in the thimble test experiment, and can reduce the cost of use.

Description

technical field [0001] The invention relates to the design of flip-chip electrodes, in particular to a manufacturing method for improving the performance of flip-chip electrodes. Background technique [0002] GaN-based light emitting diodes (Light Emitting Diodes, LEDs) have the advantages of low functional loss, long life, and good reliability, and are widely used in signal lights, backlight displays, automotive lighting, and indoor lighting. With the popularity and application of high-power and high-efficiency LEDs, flip-chip products (Filp Chip) have a broader application market and higher application value. At present, in the processing of chip-level packaging technology, traditional chip packaging equipment such as LED die-bonding machines and chip mounters generally use the method of piercing the blue film with thimbles in the separation of the chip and the blue film; the flip-chip structure product designed by this product The above-mentioned thimble performance veri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24C23C14/14C23C28/00H01L33/38
CPCC23C14/24C23C14/14C23C28/40H01L33/38H01L2933/0016
Inventor 邓高杰林武李文浩陈荣炎
Owner FUJIAN PRIMA OPTOELECTRONICS CO LTD