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Trench gate super junction IGBT with isolation p-top region

A groove-shaped gate and base area technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of poor conductance modulation effect, increased conduction voltage drop, and difficult storage of holes.

Active Publication Date: 2021-04-13
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in ordinary super-junction IGBTs, the conductance modulation effect (or carrier storage effect) of the n-column and p-column in the on-state is poor, mainly because the p-column is easy to collect holes and quickly convert the collected Holes are extracted to the emitter, making it difficult for holes to be effectively stored in the n-column and p-column, increasing the conduction voltage drop

Method used

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  • Trench gate super junction IGBT with isolation p-top region
  • Trench gate super junction IGBT with isolation p-top region
  • Trench gate super junction IGBT with isolation p-top region

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Embodiment Construction

[0052] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0053] figure 1 (a) is a schematic diagram of the structure of a common superjunction IGBT, figure 1 (b) is a schematic diagram of the structure of a common semi-superjunction IGBT. Compared with the super-junction IGBT, the semi-super-junction IGBT has one more between the n-pillar (n-pillar area 31) and the p-pillar (p-pillar area 32) and the n-type buffer zone (n-buffer area 20) for An n-type auxiliary layer (n-assist layer 30) that bears part of the applied voltage, wherein the doping concentration of the n-type auxiliary layer (n-assist layer 30) may be lower than or equal to the doping concentration of the n region (n-pillar region 31) concentration. When a voltage exceeding the threshold voltage is applied to the gate (G), an electronic channel is formed near the interface between the base region (p-base region 41) and the insulating layer (49); if a volt...

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Abstract

The invention provides a super-junction IGBT (Insulated Gate Bipolar Transistor) device, which is characterized in that a top region of a second conductivity type with lower resistivity is arranged above a semiconductor region of the second conductivity type in a voltage-withstanding layer, and is isolated from a base region of the second conductivity type through a groove-type gate structure; and a carrier storage layer of the first conductivity type is arranged between the semiconductor region of the first conductivity type in the voltage withstanding layer and the base region. In a forward conduction state, a voltage drop is generated on the top region, the potential of the semiconductor region of the second conduction type in the voltage withstanding layer is improved, and the conduction voltage drop is helped to be reduced.

Description

technical field [0001] The invention belongs to semiconductor devices, especially power semiconductor devices. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a medium and high voltage power semiconductor switching device. Since a large number of unbalanced carriers need to be stored in the body to realize the conductance modulation of the withstand voltage layer (high resistance region) during conduction, the turn-off speed of the IGBT will be slower than that of the unipolar power semiconductor device. Therefore, IGBT has a contradictory relationship between turn-on voltage drop and turn-off power consumption. Superjunction (SJ) is a voltage-resistant structure in which n-columns / p-columns are alternately arranged, which enables n-columns and p-columns to obtain higher breakdown voltages at higher doping concentrations, and is usually applied to single polar power semiconductor devices. In fact, super junctions can also be applied to IGBTs to h...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/7397H01L29/0619
Inventor 马瑶黄铭敏胡敏
Owner SICHUAN UNIV
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