Tin drop detection and recovery device

Abstract

The invention discloses a tin drop detection and recovery device which comprises a tin drop emitter, a tin drop recoverer and a tin drop receiver; the tin drop emitter is used for emitting tin drops drop by drop; tin drops reach the tin drop recoverer through the bounce of the tin drop receiver; the tin drop receiver comprises a substrate, a receiving plate located below the substrate and piezoelectric ceramics located between the substrate and the receiving plate; the piezoelectric ceramics are evenly distributed around the substrate and the receiving plate; the substrate and the receiving plate are in central symmetry patterns. and the tin drop emitter and the tin drop recoverer are symmetrically located on the two sides of the center normal of the tin drop receiver. The tin drop detection and recovery device provided by the invention can ensure that tin drops emitted by the tin drop emitter do not deviate.

Description

technical field [0001] The invention belongs to the field of photolithography machines, in particular to a tin drop detection and recovery device. Background technique [0002] At present, the mainstream extreme ultraviolet (Extremely Ultra-Violet, EUV) lithography machine adopts a laser-produced plasma (Laser Produced Plasma, LPP) light source, and the target material adopts tin (Sn). as attached figure 1 As shown, in the existing photolithography machine, tin is heated to a molten state by a heating device and ejected drop by drop by a tin drop emitter 8 . The pulsed laser 1 (generally carbon dioxide gas laser) is focused into a pulsed laser beam 2 by a focusing lens. The pulsed laser beam 2 is focused on the tin droplet 3, and the tin droplet is heated to a plasma state to generate extreme ultraviolet radiation 11 including 13.5nm. The ejection frequency of tin droplets is generally 50-200kHz, and the speed of tin droplets is usually ≥30m / s, which is synchronized with t...

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Problems solved by technology

[0003] but in the attached figure 1 In the existing structure described above, when the spout of the tin droplet is blocked by semi-solidified residual tin or the accumulation of impurities in the tin, the emission angle of the tin droplet will be shifted, and the deflected tin droplet cannot be accurately detected by the pulsed laser. 1 focus, it will not be able to effectively produce extreme ultraviolet radiation, which will affect the performance of the entire EUV lithography machine; and the deflection of tin droplets in the prior art cannot be detected in time, and it is often necessary to wait until the performance of the lithography machine is abnormal. Detect and correct in time, which seriously affects the efficiency of the lithography machine

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