a polishing pad

Abstract

The invention discloses a polishing pad, comprising a grinding layer, the grinding layer is in direct contact with a material to be ground with a diameter of Dw, the grinding layer comprises at least two concentric circular grooves, and the innermost concentric circular groove is defined as the first concentric circular groove. The outermost concentric groove is the second concentric circle; the first concentric circle and the second concentric circle define multiple grinding areas, and the widths of the three grinding areas from the center of the circle to the edge of the grinding layer are W1, W2, W3, Wherein the second grinding area width W2 satisfies: W2=0.8Dw-0.995Dw; the present invention is through the relevant parameters of the different grinding areas of the polishing pad and grooves thereof and the grinding layer, the physical parameters of the buffer layer are comprehensively designed, so that the present invention The polishing pad has excellent comprehensive performance.

Description

technical field [0001] The invention relates to a polishing pad, in particular to a polishing pad with well-designed physical parameters of a grinding layer and a buffer layer and a surface groove structure, which is used for chemical mechanical polishing of abrasive materials. Background technique [0002] In the manufacturing and processing of integrated circuits, other electronic devices and optical materials, many materials are involved in polishing, thinning or planarization, among which chemical mechanical polishing is the most widely used. The principle of chemical mechanical polishing is that on a fixed polishing machine, the abrasive liquid is applied to the polishing pad. The polishing pad contacts the surface of the material to be ground, and a chemical reaction will occur. At the same time, the polishing pad and the material to be ground are processed on the machine The rotational movement, the mechanical action of shearing, the chemical action and the mechanical...

AI Technical Summary

Problems solved by technology

Many attempts have been made on the material and groove structure of the polishing pad, but a polishing pad with better comprehensive performance has not been obtained in terms of grinding rate, inhomogeneity, defect rate, sinking and erosion.

[0004] The Chinese patent with the publication number CN102498549A discloses a polishing pad with a concentric circular groove structure, and the polishing pad has a width W of the concentric circular groove. G and the overlapping surface W L The proportional relationship of the polishing pad has been studied, but the groove ratio of the polishing pad is too large, which will easily lead to a decrease in the polishing rate

[0005] The Chinese patent with the publication number CN105793962B discloses a polishing pad with an offset concentric groove pattern. The polishing pad includes a groove area and an exclusion area. The exclusion area does not contain grooves, but the purpose of the exclusion area is Reduce the defects on the edge of the polishing pad, and then improve the scratches on the polished substrate. The relationship between the specific parameters of the peripheral surface and the polishing performance is not disclosed, and how to solve the problem of polishing non-uniformity is not disclosed

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