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Online junction temperature estimation system and method for power semiconductor device

A technology of power semiconductors and devices, applied in the field of estimation systems, can solve problems such as the lack of methods to find thermally sensitive electrical parameters

Pending Publication Date: 2021-05-07
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the dynamic thermosensitive electrical parameter method has attracted many scholars' research in recent years, but none of them have found a method for easily extracting thermosensitive electrical parameters.

Method used

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  • Online junction temperature estimation system and method for power semiconductor device
  • Online junction temperature estimation system and method for power semiconductor device
  • Online junction temperature estimation system and method for power semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] In this example, see figure 1 , an online junction temperature estimation system for power semiconductor devices, including a device voltage-current detection unit 1, a device turn-off loss calculation unit 2, a collector current-turn-off loss-junction temperature three-dimensional data feature library unit 3, and a device junction temperature Estimation unit 4 and device junction temperature output display unit 5;

[0042] The device voltage-current detection unit 1 is used to detect and provide voltage and current signals of the power semiconductor device to be tested;

[0043] The device turn-off loss calculation unit 2 is used to calculate the turn-off loss of the power semiconductor device.

[0044] The collector current-turn-off loss-junction temperature three-dimensional data feature library unit 3 is used to store the previously calibrated collector current-turn-off loss-junction temperature three-dimensional data feature library of power semiconductor devices;...

Embodiment 2

[0050] This embodiment is basically the same as Embodiment 1, especially in that:

[0051] In this example, if figure 2 As shown, the device voltage-current detection unit 1 includes a voltage sensor 1-1, a current sensor 1-2, a conditioning circuit 1-3 and a data output unit 1-4;

[0052] The voltage sensor 1-1 and the current sensor 1-2 collect the collector-emitter voltage and collector current data of the device in real time, and are conditioned by the conditioning circuit 1-3 to output electrical signals with practical significance and that can be processed , the electrical signal passing through the conditioning circuit 1-3 is transmitted to the device turn-off loss calculation unit 2 through the data output unit 1-4.

[0053] In order to capture the fast-changing switching process of the power semiconductor device to be tested, the voltage sensor 1-1 and the current sensor 1-2 are preferably high-precision, high-fidelity, and high-bandwidth voltage and current sensors...

Embodiment 3

[0061] This embodiment is basically the same as the above-mentioned embodiment, and the special features are:

[0062] In this embodiment, a method for estimating the online junction temperature of a power semiconductor device is operated by using the above-mentioned system, and includes the following steps:

[0063] Step 1, the device voltage-current detection unit 1 collects and transmits the collector-emitter voltage and collector current data of the power semiconductor device in real time, and sends them to the device turn-off loss calculation unit 2 and the device junction temperature estimation unit 4;

[0064] Step 2, the device turn-off loss calculation unit 2 passes through the analog / digital conversion unit 2-2 and the data processing unit 2 according to the collector-emitter voltage and collector current collected by the acquisition unit data 2-1 -3 calculate the turn-off loss of the device, and transmit the calculation result to the junction temperature estimation ...

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Abstract

The invention discloses an online junction temperature estimation system and method for a power semiconductor device. The system comprises a device voltage-current detection unit, a device turn-off loss calculation unit, a collector current-turn-off loss-junction temperature three-dimensional data feature library unit, a device junction temperature estimation unit and a device junction temperature output display unit. According to the method, the energy loss in the single turn-off process of the device is adopted as a characteristic parameter of junction temperature prediction, online junction temperature prediction can be accurately realized through extraction of the turn-off loss, and support and guarantee are provided for reliability analysis of the device. The method has the advantages of simplicity in implementation, low invasiveness, high accuracy and the like.

Description

technical field [0001] The invention belongs to the field of estimation systems and methods, and in particular relates to an online junction temperature state estimation system and method of power semiconductor devices. Background technique [0002] With the continuous development of economies around the world, energy conversion devices and systems based on power electronics technology have been widely used in various industries around the world. For example, aerospace power system, variable voltage variable frequency speed regulation system, power quality control device, intelligent rail transit, grid-connected power generation system for new energy power generation, distributed independent power system, new energy electric vehicle, large steel smelting control system, household Electrical and other fields. Power semiconductor devices play the role of power conversion in different types of systems, and are the core devices of all power conversion devices. [0003] The pow...

Claims

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Application Information

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IPC IPC(8): G01R31/26G01K13/00
CPCG01K13/00G01R31/2601
Inventor 徐国卿魏伟伟孙方刚
Owner SHANGHAI UNIV
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