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Semiconductor power device based on su-8 photoresist, its preparation method and power module including same

A technology of SU-8 and power devices, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as epitaxial layer crack damage, achieve low preparation costs, and increase power gain cut-off frequency , The effect of excellent withstand voltage characteristics

Active Publication Date: 2022-04-15
王琮
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the existing compound semiconductor power device adopts plasma deposition or etching process to form the protective layer of inorganic insulating material, which is easy to produce problems such as crack damage in the epitaxial layer, and provides a photoresist based on SU-8 Semiconductor power device of glue compound, method for producing the same, and power module including the same

Method used

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  • Semiconductor power device based on su-8 photoresist, its preparation method and power module including same
  • Semiconductor power device based on su-8 photoresist, its preparation method and power module including same
  • Semiconductor power device based on su-8 photoresist, its preparation method and power module including same

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specific Embodiment approach 1

[0037] Embodiment 1: The compound semiconductor power device based on SU-8 photoresist in this embodiment includes a substrate 110, a semiconductor stack structure 120, a source 142, a drain 144, and a gate 146, and a semiconductor is formed on the substrate 110. A stacked structure 120, a source 142 and a drain 144 are arranged in isolation from each other on the semiconductor stacked structure 120; a gate 146 is arranged between the source 142 and the drain 144 on the semiconductor stacked structure 120; A passivation layer 152 is disposed between the gate 146 and the semiconductor layer stack 120, and a second passivation layer 154 is formed on the gate 146 and the semiconductor layer stack 120;

[0038] Wherein the first passivation layer 152 and the second passivation layer 154 both include photoresist glue.

specific Embodiment approach 2

[0039] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the substrate 110 is a silicon carbide (SiC) substrate, a silicon substrate, a gallium arsenide (GaAs) substrate, a gallium nitride (GaN) substrate, indium phosphide (InP) substrate, aluminum nitride (AlN) substrate, sapphire substrate or glass substrate.

specific Embodiment approach 3

[0040] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the photoresist is SU-8 photoresist.

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Abstract

A semiconductor power device based on SU‑8 photoresist glue and its preparation method and a power module comprising it, the present invention will solve the problem that the existing semiconductor power device adopts plasma deposition or etching process to form an inorganic insulating material protective layer, which is easy to be in the epitaxial layer Problems such as crack damage occur in the In the semiconductor power device of the present invention, a semiconductor stacked structure is formed on the substrate, and a source and a drain are arranged in isolation from each other on the semiconductor stacked structure; gate; the first passivation layer is arranged between the gate and the semiconductor stack structure, the second passivation layer is formed on the stack structure of the gate and the semiconductor layer, the first passivation layer and the second passivation layer are both Including photoresists. The semiconductor power device of the present invention includes a passivation layer of photoresist glue, which can prevent damage to the device by plasma or etching process.

Description

technical field [0001] The invention relates to a semiconductor power device with a double heterostructure based on photoresist glue, a manufacturing method thereof, and a power module including the semiconductor power device. Background technique [0002] With the rapid development of information and communication technology, the demand for high-frequency, high-temperature, and high-power electronic components is increasing, and various researches are being carried out on power components that can control high power in particular. For high electron mobility transistor (HEMT) devices using double heterostructures of compound semiconductors, due to the large discontinuity of the conduction band at the interface, a two-dimensional electron gas with a high concentration of electrons concentrated at the interface can be formed (2DEG), and may have high electron mobility in the 2DEG region. Thus, various studies using compound semiconductor power devices having high breakdown vo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/29H01L29/40H01L29/778H01L21/335H01L21/56
CPCH01L29/7787H01L29/66462H01L29/402H01L23/293H01L21/56
Inventor 王琮
Owner 王琮