Preparation method of surface acoustic wave transducer with temperature compensation function
A technology of temperature compensation and surface acoustic wave, applied in the direction of electrical components, impedance networks, etc., can solve the problems of inflexibility in process and design, limit the development of TCSAW, poor communication signals, etc., and achieve easy large-scale promotion and shorten the slow speed Deposition process, effect of reducing processing time
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0039] A method for preparing a surface acoustic wave transducer with a temperature compensation function, comprising the steps of:
[0040] Step 1, such as Figure 6 As shown in (a), the piezoelectric substrate 1 is obtained and the surface is cleaned. Piezoelectric substrate 1 uses 128°YX-LiNbO with high electromechanical coupling coefficient 3 wafer.
[0041] Step 2, preparing an interdigital transducer on the piezoelectric substrate 1 by photolithography, evaporation, stripping and other processes.
[0042] The interdigital transducer includes a first interdigital structure and a second interdigital structure arranged oppositely, and a first bus bar connected to the comb handle part of the first interdigital structure and a comb handle part connected to the second interdigital structure Connected second bus bars, each interdigitated structure is respectively placed between two adjacent electrode fingers of another interdigitated structure without touching each other, th...
Embodiment 2
[0053] A method for preparing another surface acoustic wave transducer with a temperature compensation function, comprising the following steps:
[0054] Step 1. Obtain the piezoelectric substrate 1 and clean the surface. Piezoelectric substrate 1 uses 42°YX-LiTaO with high electromechanical coupling coefficient 3 wafer.
[0055] Step 2, preparing an interdigital transducer on the piezoelectric substrate 1 by photolithography, evaporation, stripping and other processes.
[0056] The structure of the IDT is the same as that of Embodiment 1, and will not be repeated here. Specifically, combine image 3 , Figure 4 , Figure 6 As shown in (b), the period length λ of the interdigital electrodes of the interdigital transducer is set to 3.8-4.2um, and the metallization ratio of the interdigital electrodes in the interdigital region is 0.52. The first interdigital structure includes the first interdigital electrode I2 and the first interdigital electrode II7, and the second int...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com