Unlock instant, AI-driven research and patent intelligence for your innovation.

Microwave suppression structure and microwave suppression method for MPCVD equipment

A microwave suppression and equipment technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as easy contact of metal sealing rings, easy deformation and aging of metal sealing rings, and reduced shielding performance.

Pending Publication Date: 2021-05-18
航天科工(长沙)新材料研究院有限公司
View PDF12 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] 1. The metal sealing ring is prone to poor contact and easy to catch fire in the microwave field;
[0005] 2. The metal sealing ring is easy to deform and age when it is used for a long time, and the shielding performance is reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microwave suppression structure and microwave suppression method for MPCVD equipment
  • Microwave suppression structure and microwave suppression method for MPCVD equipment
  • Microwave suppression structure and microwave suppression method for MPCVD equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] refer to Figure 1-Figure 2 , the present invention provides a microwave suppression structure for MPCVD equipment, including a diamond growth substrate table 2 and a support frame 3 arranged in a vacuum chamber 1, the support frame 3 has a first cavity 31, and the diamond growth substrate The platform 2 is movably socketed in the first cavity 31, and the diamond growth substrate platform 2 can be vertically lifted and lowered in the first cavity 31 of the support frame 3, and the inner side wall of the support frame 3 is provided along the circumferential direction. There are microwave suppression grooves 32 to form at least two discontinuous microwave transmission paths, and the sum of the distances of the two discontinuous microwave transmission paths is an integer multiple of λ / 2, and the distance of each microwave transmission path is an odd number of λ / 4 times, where λ is the microwave wavelength; specifically, in this embodiment, the vertical distance L1 between ...

Embodiment 2

[0040] The present invention also provides a microwave suppression method for MPCVD equipment, the steps comprising:

[0041] Periodic Transformation Law of Internal Impedance of Transmission Line Through Terminal Short Circuit An equivalent short-circuit surface S2S1 is formed between the support frame 3 of the MPCVD equipment and the diamond growth substrate table 2, so that the internal impedance of the terminal short-circuit transmission line approaches infinity, thereby preventing microwave leakage, where Z in is the input impedance, Z 0 is the characteristic impedance of the transmission line, λ is the wavelength, and Z' is the distance to the short-circuit surface S2. The present invention utilizes the transmission characteristics of microwaves to shield microwaves, increases the reliability of the system, and prolongs the life of the structure. Compared with the traditional method, an elastic metal sealing ring 8 is added between the lifting platform and the support ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a microwave suppression structure and a microwave suppression method for MPCVD equipment. The microwave suppression structure for the MPCVD equipment comprises a diamond growth substrate table and a support frame which are arranged in a vacuum cavity, wherein the support frame is provided with a first empty cavity, and the diamond growth substrate table is movably connected into the first empty cavity in a sleeved mode; the diamond growth substrate table can vertically lift in the first empty cavity of the supporting frame, microwave suppression grooves are formed in the inner side wall of the supporting frame in the circumferential direction to form at least two discontinuous microwave transmission paths, and the sum of the distance between the two discontinuous microwave transmission paths is an integral multiple of lambda / 2; and the distance of each section of the microwave transmission path is an odd multiple of lambda / 4, wherein lambda is the microwave wavelength. According to the invention, only the microwave suppression grooves need to be formed in the inner side wall of the supporting frame in the circumferential direction, and the internal impedance of a terminal short-circuit transmission line of a microwave approaches infinity by utilizing the transmission characteristic of the microwave, so that the leakage of the microwave is prevented, and the structure is simple and reliable.

Description

technical field [0001] The invention belongs to the technical field of microwave plasma processing, and in particular relates to a microwave suppression structure and microwave suppression method for MPCVD equipment. Background technique [0002] Microwave plasma chemical vapor deposition (MPCVD for short) is a method where the microwave generated by the microwave generator enters the reaction chamber through the isolator through the waveguide, and under the excitation of the microwave, the gas molecules in the reaction chamber are ionized. The equipment that generates plasma and deposits diamond film on the substrate has the advantages of large output, high quality and low cost. The gas is ionized, forming a plasma, which then deposits solid species on the substrate surface. [0003] Traditionally, the structure of the substrate stage of the existing MPCVD equipment is divided into two types: liftable and non-liftable. Non-liftable equipment cannot grow thicker diamonds, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/511
CPCC23C16/511Y02P40/57
Inventor 魏浩胤黄翀
Owner 航天科工(长沙)新材料研究院有限公司