Growth device and growth method for YCOB crystal growth
A technology of crystal growth and growth device, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of small crystal growth size, poor crystal quality, polycrystalline and other problems
Pending Publication Date: 2021-05-18
TONGJI UNIV
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Problems solved by technology
Traditional YCOB crystal growth methods include: co-solvent method, pulling method and crucible drop method, among which the co-solvent method has a complex system, small crystal growth size, and defects such as polycrystals, which lead to poor crystal quality and cannot meet the application requirements in the optical field; Although the pulling method and the crucible drop method can grow high-quality YCOB crystals, the pulling method has the problem of spiral growth, and defects such as polycrystals, dissociation cracks, and inclusions also exist in the two growth methods.
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Embodiment 1
[0042] A growth device for YCOB crystal growth, such as figure 1 , the device includes: a crucible 6, used to hold a raw material melt 8 for crystal growth; a crystal growth mold 7, used to guide the flow direction of the raw material melt 8; a seed rod 1, used to guide crystal growth;
[0043] The crystal growth mold 7 is placed in the crucible 6 and fixed by a mold ferrule. After the raw material in the crucible 6 is melted, the raw material melt 8 rises from the mold slit to the upper surface of the growth mold 7 through siphon action, and is pulled by the seed crystal 4 to grow the crystal; The seed rod 1 can be moved up and down above the growth mold 7, the seed rod 1 is provided with a seed crystal 4 for pulling crystal growth, and the crucible 6 is covered with an induction coil for inductively heating the crucible 6. 12. The device also includes an insulated container for avoiding heat dissipation during crystal growth; the crucible 6 is placed in the insulated containe...
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Abstract
The invention relates to a growth device and a growth method for YCOB crystal growth. The growth device comprises a crucible (6); a crystal growth mold (7); and a seed rod (1). The crystal growth mold (7) is arranged in the crucible (6), the seed crystal rod (1) is arranged above the growth mold (7) in a manner of moving up and down, the lower part of the seed crystal rod (1) is provided with a seed crystal (4) for pulling the crystal to grow, and the crucible (6) is sleeved with an induction coil (12) for performing induction heating on the crucible (6). The growth method comprises the following steps: (1) preprocessing raw materials; (2) loading; (3) melting crystal; (4) seeding; (5) shouldering; (6) carrying out equal-diameter growth; and (7) cooling and annealing. Compared with the prior art, crystal growth is carried out by adopting an edge-defined film-fed crystal growth method, so that the method has the advantages of small crystal growth solid-liquid interface, high crystallization speed, high crystal quality, sizing and directional growth and the like, and becomes one of mainstream growth modes of over-sized crystals.
Description
technical field [0001] The invention relates to the field of crystal material preparation, in particular to a growth device and a growth method for YCOB crystal growth. Background technique [0002] Ultra-intensity and ultra-fast is one of the main development directions of laser technology. How to increase the laser peak power and shorten the laser pulse width has always been the research topic in the field of laser technology. At present, the main technical methods to realize ultra-fast laser output are: Q-switching technology, mode-locking technology, chirped pulse amplification (CPA) technology, optical parametric chirped pulse amplification (OPCPA) technology and quasi-parametric chirped pulse amplification (QPCPA) technology. ) technology, among which, OPCPA technology has the advantages of high gain, large bandwidth and good beam quality, and can further increase the laser peak power through cascading, beam combining, etc., and is the main way to achieve ultra-high pe...
Claims
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IPC IPC(8): C30B15/34C30B29/22
CPCC30B15/34C30B29/22
Inventor 王庆国吴锋徐军唐慧丽罗平薛艳艳
Owner TONGJI UNIV