Crystallization temperature-adjustable Ga30Sb70/Sb80Te20 nano composite multi-layer phase-change thin-film material

A sb80te20, nanocomposite technology, applied in the field of microelectronics, can solve the problems of unfavorable crystallization temperature to thermal stability of memory devices, slow crystallization speed, affecting the programming speed of phase change memory, etc., to reduce programming power consumption, fast crystallization speed, good The effect of thermal stability

Inactive Publication Date: 2010-08-18
TONGJI UNIV
View PDF4 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Sb-rich Sb 80 Te 20 Phase-change materials have a growth-dominated crystallization behavior, and their crystallization speed is fast, which can meet the high-speed storage requirements of phase-change memory. Temperature is not conducive to the thermal stability of memory devices; Ga 30 Sb 70 Phase change materials have a high crystallization temperature, which can meet the requirements of thermal stability of devices, but their crystallization speed is slow, which affects the programming speed of phase change memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystallization temperature-adjustable Ga30Sb70/Sb80Te20 nano composite multi-layer phase-change thin-film material
  • Crystallization temperature-adjustable Ga30Sb70/Sb80Te20 nano composite multi-layer phase-change thin-film material
  • Crystallization temperature-adjustable Ga30Sb70/Sb80Te20 nano composite multi-layer phase-change thin-film material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Ga prepared in this example 30 Sb 70 / Sb 80 Te 20 The nanocomposite multilayer phase change film material structure is specifically [Ga 30 Sb 70 (3nm) / Sb 80 Te 20 (5nm)] 13 , [Ga 30 Sb 70 (4nm) / Sb 80 Te 20 (5nm)] 11 , [Ga 30 Sb 70 (5nm) / Sb 80 Te 20 (5nm)] 10 and [Ga 30 Sb 70 (10nm) / Sb 80 Te 20 (5nm)] 7 , and the Ga 30 Sb 70 / Sb 80 Te 20 The total thickness of the nanocomposite multilayer phase change film material is 100nm.

[0032] The preparation steps are:

[0033] 1) Clean SiO2 2 / Si(100) substrate: clean the surface and back, remove dust particles, organic and inorganic impurities; strong ultrasonic cleaning in acetone solution for 3-5 minutes, rinse with deionized water; then strong ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, high-purity N 2 Dry the surface and back; dry the water vapor in an oven at 120°C for about 20 minutes;

[0034] 2) Prepare the alloy target: set the radio frequency power...

Embodiment 2

[0037] Ga prepared in this example 30 Sb 70 / Sb 80 Te 20 The nanocomposite multilayer phase change film material structure is specifically [Ga 30 Sb 70 (5nm) / Sb 80 Te 20 (15nm)] 5 , [Ga 30 Sb 70 (5nm) / Sb 80 Te 20 (10nm)] 7 , [Ga 30 Sb 70 (5nm) / Sb 80 Te 20 (7nm)] 8 , [Ga 30 Sb 70 (5nm) / Sb 80 Te 20 (5nm)] 10 and [Ga 30 Sb 70 (5nm) / Sb 80 Te 20 (4nm)] 11 , and the Ga 30Sb 70 / Sb 80 Te 20 The total thickness of the nanocomposite multilayer phase change film material is 100nm.

[0038] The preparation steps are:

[0039] 1) Clean SiO2 2 / Si(100) substrate: clean the surface and back, remove dust particles, organic and inorganic impurities; strong ultrasonic cleaning in acetone solution for 3-5 minutes, rinse with deionized water; then strong ultrasonic cleaning in ethanol solution for 3-5 minutes, rinse with deionized water, high-purity N 2 Dry the surface and back; dry the water vapor in an oven at 120°C for about 20 minutes;

[0040] 2) Prepare t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
crystallization temperatureaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of microelectronics, in particular to a crystallization temperature-adjustable Ga30Sb70 / Sb80Te20 nano composite multi-layer phase-change thin-film material. The Ga30Sb70 / Sb80Te20 nano composite multi-layer phase-change thin-film material is formed by the alternating arrangement and the nanometer-level compounding of Ga30Sb70 thin films and Sb80Te20 thin films, wherein the thickness range of a monolayer Ga30Sb70 thin film is 3-10nm, and the thickness range of a monolayer Sb80Te20 thin film is 4-15nm. The Ga30Sb70 / Sb80Te20 nano composite multi-layer phase-change thin-film material can be used for a phase change memory; and compared with the conventional phase-change thin-film material, the Ga30Sb70 / Sb80Te20 nano composite multi-layer phase-change thin-film material has adjustable crystallization temperature, and has favorable thermal stability and higher crystallization rate at the same time; and meanwhile, the crystalline resistance of the thin-film material increases with the increasing of the thickness of the Ga30Sb70 thin film in the cycle, thereby being beneficial to the reduction of the programming power consumption of the memory device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a Ga 30 Sb 70 / Sb 80 Te 20 Nanocomposite multilayer phase change thin film material. Background technique [0002] Phase-change memory is a new type of non-volatile semiconductor memory, which has the advantages of high speed, high density, low power consumption, simple process, and compatibility with CMOS process. Therefore, it is regarded by the industry as the key technology most likely to replace flash memory in the future. The storage medium of phase change memory is a phase change thin film material based on chalcogenide compounds. Its basic principle is to use the high and low resistance difference between amorphous state and polycrystalline state that can be reversibly transformed to realize information storage. [0003] At present, the mainstream storage medium of phase change memory is Ge 2 Sb 2 Te 5 And doped GeSbTe phase change material, bu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 翟继卫汪昌州
Owner TONGJI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap