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Method for high numerical aperture thru-slit source mask optimization

A mask and mask design technology, which is applied in the photo-engraving process of photomechanical processing of photomechanical processing, and optics, etc., and can solve problems such as difficulty in patterning

Pending Publication Date: 2021-05-18
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Usually, k 1 The smaller the , the more difficult it becomes to reproduce a pattern on the substrate that resembles the shape and dimensions planned by the designer in order to achieve specific electrical functionality and performance

Method used

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  • Method for high numerical aperture thru-slit source mask optimization
  • Method for high numerical aperture thru-slit source mask optimization
  • Method for high numerical aperture thru-slit source mask optimization

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Embodiment Construction

[0043] Although specific reference may be made to IC fabrication in this disclosure, it should be clearly understood that the description herein has many other possible applications. For example, the description herein can be used to fabricate integrated optical systems, guidance and detection patterns for magnetic domain memories, liquid crystal display panels, thin film magnetic heads, and the like. The skilled artisan will appreciate that any use herein of the terms "reticle," "wafer," or "die" in the context of such alternate applications should be considered in contrast to the more generic term "mask," respectively. , "substrate" and "target moiety" can be interchanged.

[0044] In this document, the terms "radiation" and "beam" are used to cover all types of electromagnetic radiation, including ultraviolet radiation (e.g. having a wavelength of 365 nm, 248 nm, 193 nm, 157 nm or 126 nm) and extreme ultraviolet radiation (EUV, e. wavelengths in the range of about 5 nm to ...

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PUM

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Abstract

Described herein is a method for source mask optimization with a lithographic projection apparatus. The lithographic projection apparatus comprises an illumination source and projection optics configured to image a mask design layout onto a substrate. The method comprises determining a multi-variable source mask optimization function using a plurality of tunable design variables for the illumination source, the projection optics, and the mask design layout. The multi-variable source mask optimization function accounts for imaging variation across different positions in an exposure slit corresponding to different stripes of the mask design layout exposed by the same slit position of the exposure apparatus. The method comprises iteratively adjusting the plurality of tunable design variables in the multi-variable source mask optimization function until a termination condition is satisfied.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Application 62 / 743,058, filed October 9, 2018, which is incorporated herein by reference in its entirety. technical field [0003] This specification generally relates to improving and optimizing lithography processes. More specifically, an apparatus, method, and computer program are described that account for slit pupil variation during source mask optimization. Background technique [0004] Lithographic projection equipment can be used, for example, in the manufacture of integrated circuits (ICs). In this case, the patterning device (eg, mask) may contain or provide a pattern corresponding to a single layer of the IC ("design layout"), and a layer that has been coated may be illuminated, such as via the pattern on the patterning device. A method of transferring this pattern to a target portion (eg, comprising one or more dies) on a substrate (eg, a silicon wafer) of a layer of...

Claims

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Application Information

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IPC IPC(8): G03F1/70G03F7/20
CPCG03F7/70125G03F7/705G03F1/70G06F30/398G06F2119/18G03F1/22G03F1/36
Inventor K·Z·特鲁斯特E·范塞滕段福·史蒂芬·苏
Owner ASML NETHERLANDS BV
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