GaN-based miniature three-color LED array, manufacturing method thereof and miniature display system

Abstract

The invention discloses a GaN-based miniature three-color LED array and a manufacturing method thereof, and a miniature display system. The LED array comprises a substrate, and a buffer layer, an n-type GaN layer, a light-emitting layer, an electron blocking layer and a p-type GaN layer which are sequentially arranged on the substrate in an epitaxial manner. The substrate includes a planar portion and an array of raised structures raised upward relative to the planar portion, each raised structure in the array of raised structures having an inclined surface. The buffer layer is over the planar portion of the substrate. The upper surface of the n-type GaN layer comprises crystal faces in different orientations, the n-type GaN layer comprises a flat layer located on the buffer layer and an inverted pyramid type structure array located over the protruding structure array, inverted pyramid type structures in the inverted pyramid type structure array are concave downwards relative to the flat layer, and gaps exist between the inverted pyramid type structures and the protruding structures at the corresponding positions. The light-emitting layer comprises an InGaN / GaN multi-quantum well structure. An LED display unit is formed at the corresponding position of each inverted pyramid type structure.

Description

technical field [0001] The disclosure belongs to the field of high-resolution display, and in particular relates to a GaN-based micro-three-color LED (RGB Micro-LED) array, a manufacturing method thereof, and a micro-display system. Background technique [0002] In the field of high-resolution display, GaN-based micro-light-emitting diodes (Micro-LEDs) show great application potential. At present, due to its excellent characteristics such as small size, low power consumption, high brightness and high stability, Micro-LED is gradually showing a trend of replacing traditional liquid crystal display (LCD) and the current mainstream organic light-emitting diode (OLED) technology. Because Micro-LED itself emits light, it can avoid the energy conversion problem caused by the use of backlight in traditional display technology, and presents excellent characteristics of high brightness. At the same time, the size of Micro-LED itself is very small, each pixel unit is less than 50 μm,...

AI Technical Summary

Problems solved by technology

[0003] However, since each pixel unit requires multi-chip Micro-LEDs of three primary colors to achieve color adjustment, complex integration technology is bound to be accompanied by an increase in cost

At the same time, in the manufacturing process of the existing GaN-based Micro-LED, due to its small size, the surface area increases after chip dicing, resulting in an increase in sidewall defects, resulting in a decrease in luminous efficiency and an increase in leakage current.

[0004] In the existing LED display system based on single-chip technology, there are problems such as limited color adjustable range, uneven carrier injection, or limited flexibility in adjusting luminous color.

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