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Integrated system for monocrystalline silicon epitaxial wafer detection

An integrated system and epitaxial wafer technology, applied in the direction of measuring devices, instruments, etc., can solve the problems of low detection efficiency and cumbersome detection process of epitaxial wafers, and achieve the effect of easy detection, improved detection efficiency and convenient detection

Active Publication Date: 2021-06-01
四川雅吉芯电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After the epitaxial wafer is produced, it needs to be tested by equipment to judge whether it meets the use standard, but the existing detection process is cumbersome, resulting in low detection efficiency of the epitaxial wafer

Method used

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  • Integrated system for monocrystalline silicon epitaxial wafer detection
  • Integrated system for monocrystalline silicon epitaxial wafer detection
  • Integrated system for monocrystalline silicon epitaxial wafer detection

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Embodiment

[0029] Such as Figure 1 to Figure 6 As shown, the integrated system for detection of single crystal silicon epitaxial wafers provided by this embodiment includes a workbench 1, a protective cover 5, a feeding device 6 and a detection mechanism 7, and the workbench 1 is processed with a placement cavity 11 for placing epitaxial wafers. A lamp panel 3 is placed on the surface of the placement cavity 11. The lamp panel 3 is composed of a plurality of LED lamp discharge materials. A honeycomb cover 31 is installed on the lamp panel 3. The honeycomb cover 31 is ring-shaped, and the honeycomb cover 31 is made of black material. Its purpose is to make the light emitted by the lamp panel 3 irradiate vertically upwards, so as to quickly read the orthographic area of ​​the single crystal silicon epitaxial wafer, thereby improving the speed of measuring the area of ​​the single crystal silicon epitaxial wafer, and place it in the middle of the cavity 11. A rotary table 4 is installed, a...

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Abstract

The invention discloses an integrated system for monocrystalline silicon epitaxial wafer detection, which comprises a workbench, a protective cover, a discharging device and a detection mechanism, wherein a placement cavity for placing an epitaxial wafer is processed on the workbench, a lamp panel is placed on the surface of the placement cavity, a rotating table is mounted in the middle of the placement cavity, the protective cover matched with the placement cavity is hinged to one side of the surface of the workbench, the top of the inner wall of the protective cover is provided with a photosensitive element matched with the lamp panel, the other side of the surface of the workbench is provided with a feeding device for putting the epitaxial wafer into the rotating table, and the inner wall of the placement cavity is telescopically provided with a detection mechanism for detecting the epitaxial wafer. The feeding device and the detection mechanism are arranged on the workbench, continuous detection of the epitaxial wafer can be achieved, the temperature, thickness and flatness of the epitaxial wafer and the area of the epitaxial wafer can be detected at the same time, the detection efficiency of the epitaxial wafer is improved, and then the production efficiency of the epitaxial wafer is guaranteed.

Description

technical field [0001] The invention relates to the field of detection of epitaxial wafers, in particular to an integrated system for detection of single crystal silicon epitaxial wafers. Background technique [0002] Epitaxy is one of the semiconductor processes. The bottom layer of the silicon wafer is P-type substrate silicon, and a layer of single crystal silicon is grown on the substrate. This layer of single crystal silicon is called the epitaxial layer. The epitaxial layer is used as the collector region, and there are base regions and emitter regions on it, so the epitaxial wafer is a silicon wafer with an epitaxial layer on the top. The production of epitaxial wafers mostly adopts metal-organic chemical vapor deposition process, and its working temperature is 700-1100°C. During the production process, raw materials such as trimethylgallium and ammonia are transported to the metal-organic chemical vapor deposition system through different pipelines. Simple substance...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01D21/02
CPCG01D21/02Y02P70/50
Inventor 彭日宇李治宇
Owner 四川雅吉芯电子科技有限公司
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