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Semiconductor structure and forming method thereof

A semiconductor and device layer technology, applied in the field of semiconductor structure and its formation, can solve problems such as current instability, affecting the reliability and stability of semiconductor devices, and achieve the effect of improving conductivity and improving production yield

Pending Publication Date: 2021-06-01
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] In the prior art, when an interconnection layer is used to connect the upper and lower device layers in a semiconductor device, faults such as current instability are likely to occur during use, which affects the reliability and stability of the semiconductor device using the interconnection layer

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0019] Research has found that when the interconnection layer is used to connect two device layers at different heights in the semiconductor device in the prior art, faults such as current instability are prone to occur, and the reason for low reliability and stability is that the interconnection layer When a current flows through the metal layer, the metal ions in the metal layer will produce mass transport along the metal layer, causing voids or whiskers in certain parts of the metal layer, resulting in the final production of semiconductor devices prone to failures such as current instability. Reduced reliability and stability.

[0020] A semiconductor structure proposed by the present invention and a method for forming the same will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0021] see figure 1 , is a schematic cross-sectional structure diagram of a semiconductor structure in a specific embodiment of the present ...

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Abstract

The invention relates to a semiconductor structure and a forming method thereof, which can improve the reliability and the stability of a semiconductor device using an interconnection layer. The semiconductor structure comprises a substrate, a first device layer and a second device layer which are sequentially formed above the substrate, and a dielectric layer which is formed between the first device layer and the second device layer. A metal layer is embedded in the dielectric layer, and the first end and the second end of the metal layer are respectively exposed out of the upper bottom surface and the lower bottom surface of the dielectric layer; and a barrier layer is formed on the outer surface of the metal layer to wrap the metal layer so as to block electromigration between metal ions in the metal layer and the first device layer, the second device layer and the dielectric layer.

Description

technical field [0001] The invention relates to the field of semiconductor structures, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor device manufacturing technology, semiconductor devices already have a deep submicron structure, and each device layer in the semiconductor device can rely on the interconnection layer formed between each device layer to realize electrical connection. The interconnection layer includes a dielectric layer and a metal layer embedded in the dielectric layer. The metal layer is connected to the conductive region of the device layer, thereby forming an electrical connection between device layers at different heights. [0003] In the prior art, when an interconnection layer is used to connect the upper and lower device layers of a semiconductor device, faults such as current instability are likely to occur during use, which affects the reliability and ...

Claims

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Application Information

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IPC IPC(8): H01L23/532H01L21/768
CPCH01L21/76841H01L21/76843H01L21/76849H01L23/53238H01L23/53276
Inventor 左权
Owner CHANGXIN MEMORY TECH INC
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