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Centrifugal spray granulation process for preparing high-density ITO target material

A centrifugal spray, high-density technology, applied in the field of ITO target material processing, can solve the problem of slow drying rate of misty raw materials

Active Publication Date: 2021-06-04
株洲火炬安泰新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a centrifugal spray granulation process for preparing high-density ITO targets, which solves the problem of slow drying rate of mist raw materials during the spray drying process of ITO targets. question

Method used

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  • Centrifugal spray granulation process for preparing high-density ITO target material
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  • Centrifugal spray granulation process for preparing high-density ITO target material

Examples

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Effect test

Embodiment 1

[0036] Example 1: A centrifugal spray granulation process for preparing high-density ITO targets, such as Figure 1-7 shown, including the following steps:

[0037] S1, according to In 2 o 3 / SnO 2 The mass ratio is 9:1, and In is weighed with a purity greater than 99.99%. 2 o 3 Nanopowder and SnO 2 Nano powder, add deionized water and dispersant, stir evenly to obtain a slurry with a solid content of 65%;

[0038]S2. Mill the slurry in step S1 by a sand mill for 20 minutes, then add a binder and a defoamer, and mix evenly to obtain a slurry to be granulated;

[0039] S3, extract the outside air through the fan 13, so that the air is discharged into the tank body 1 through the air distribution pipe 9 in the tank body 1 used for granulation after passing through the filter 12, the heater 11 and the air collecting pipe 19 in sequence, until the cloth in the tank body 1 Hot gas with a full temperature of 180°C; transport the slurry to be granulated in step S2 through the f...

Embodiment 2

[0049] Embodiment 2: A centrifugal spray granulation process for preparing high-density ITO targets, the difference from Embodiment 1 is that it includes the following steps:

[0050] S1, according to In 2 o 3 / SnO 2 The mass ratio is 9:1, and In is weighed with a purity greater than 99.99%. 2 o 3 Nanopowder and SnO 2 Nano powder, add deionized water and dispersant, stir evenly to obtain a slurry with a solid content of 60%;

[0051] S2. Mill the slurry in step S1 by a sand mill for 10 minutes, then add a binder and a defoamer, mix evenly, and obtain the slurry to be granulated;

[0052] S3, extract the outside air through the fan 13, so that the air is discharged into the tank body 1 through the air distribution pipe 9 in the tank body 1 used for granulation after passing through the filter 12, the heater 11 and the air collecting pipe 19 in sequence, until the cloth in the tank body 1 Hot gas with a full temperature of 130°C; transport the slurry to be granulated in st...

Embodiment 3

[0055] Embodiment 3: A centrifugal spray granulation process for preparing high-density ITO targets, the difference from Embodiment 1 is that it includes the following steps:

[0056] S1, according to In 2 o 3 / SnO 2 The mass ratio is 9:1, and In is weighed with a purity greater than 99.99%. 2 o 3 Nanopowder and SnO 2 Nano powder, add deionized water and dispersant, stir evenly to obtain a slurry with a solid content of 70%;

[0057] S2. Mill the slurry in step S1 by a sand mill for 30 minutes, then add a binder and a defoamer, and mix evenly to obtain a slurry to be granulated;

[0058] S3, extract the outside air through the fan 13, so that the air is discharged into the tank body 1 through the air distribution pipe 9 in the tank body 1 used for granulation after passing through the filter 12, the heater 11 and the air collecting pipe 19 in sequence, until the cloth in the tank body 1 Hot gas with a full temperature of 240°C; transport the slurry to be granulated in st...

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Abstract

The invention discloses a centrifugal spray granulation process for preparing a high-density ITO target material, and belongs to the technical field of ITO target material processing, the centrifugal spray granulation process comprises the following steps: S1, In2O3 nano powder and SnO2 nano powder are weighed, deionized water and a dispersant are added, and uniformly stirred to obtain slurry; s2, the slurry is subjected to ball milling through a sand mill, then a binder and a defoaming agent are added, and slurry to be granulated is obtained after uniform mixing; s3, external air is extracted through a draught fan, so that the air sequentially passes through a filter, a heater and an air collecting pipe and then is exhausted into the tank body through an air distributing pipe in the tank body for granulation till the tank body is full of hot air with the temperature of 130-240 DEG C; the slurry to be granulated is conveyed through the feeding pipe, so that the slurry to be granulated is atomized through the atomizer and then sprayed into the tank body, and the required granulated powder is obtained. The problem that in the ITO target material spray drying process, the drying rate of the vaporous raw materials is low is solved.

Description

technical field [0001] The invention relates to the technical field of ITO target material processing, more specifically, it relates to a centrifugal spray granulation process for preparing high-density ITO target material. Background technique [0002] ITO target is an important raw material for preparing ITO conductive glass. In addition to being used in liquid crystal display (LCD) panels, ITO targets can also be used in many electronic products, such as touch screens, organic light-emitting flat-panel displays, plasma displays, automotive heat-resistant and defogging glass, solar cells, photoelectric converters, transparent Heater anti-static film, infrared reflection device, etc. The ITO target can form a transparent ITO conductive film on the glass after sputtering. Its performance is the key factor to determine the quality, production efficiency and yield of conductive glass products. Manufacturers of conductive glass require stable and continuous production of cond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/622C04B35/626
CPCC04B35/01C04B35/622C04B35/62695C04B2235/3286C04B2235/3293
Inventor 唐智勇
Owner 株洲火炬安泰新材料有限公司
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