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Aluminum-silicon alloy sputtering target material and preparation method and application thereof

An aluminum-silicon alloy and sputtering target technology, applied in the field of sputtering targets, can solve the problems of complexity, high heat preservation temperature, unfavorable production cost, etc., achieve good density, simplify the process flow, and facilitate the controllable adjustment of temperature Effect

Pending Publication Date: 2021-06-04
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the invention process is relatively complicated, and the heat preservation temperature of the hot isostatic pressing treatment is also as high as 800-1300°C, which is not conducive to saving production costs

Method used

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  • Aluminum-silicon alloy sputtering target material and preparation method and application thereof
  • Aluminum-silicon alloy sputtering target material and preparation method and application thereof
  • Aluminum-silicon alloy sputtering target material and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0043] This embodiment provides an aluminum-silicon alloy sputtering target and its preparation method, such as figure 1 Shown, described preparation method comprises the following steps:

[0044] (1) filling and compacting aluminum-silicon alloy powder with an average particle size of 40 μm in a stainless steel sheath to obtain a first green body; the proportion of aluminum in the aluminum-silicon alloy powder is 50 wt %;

[0045] (2) weld the top cover of the stainless steel sheath, and place in the heating furnace, the first green body that step (1) gains is in absolute vacuum degree be 1 * 10 -2 Pa, and the degassing temperature is 300° C. to carry out vacuum degassing treatment for 6 hours to obtain the second green body;

[0046] (3) Place the stainless steel sheath in a hot isostatic pressing sintering furnace, and perform hot isostatic pressing on the second green body obtained in step (2) at an applied pressure of 200 MPa and a sintering temperature of 460°C for 5 ho...

Embodiment 2

[0050] This embodiment provides an aluminum-silicon alloy sputtering target and its preparation method, such as figure 1 Shown, described preparation method comprises the following steps:

[0051] (1) filling and compacting aluminum-silicon alloy powder with an average particle size of 20 μm in a stainless steel sheath to obtain a first green body; the proportion of aluminum in the aluminum-silicon alloy powder is 48.5wt%;

[0052] (2) weld the top cover of the stainless steel sheath, and place in the heating furnace, the first green body that step (1) gains is in absolute vacuum degree be 1 * 10 -4 Pa, and the degassing temperature is 250° C. to carry out vacuum degassing treatment for 7 hours to obtain the second green body;

[0053] (3) placing the stainless steel sheath in a hot isostatic pressing sintering furnace, and subjecting the second green body obtained in step (2) to hot isostatic pressing for 5.5 hours at an applied pressure of 250 MPa and a sintering temperatur...

Embodiment 3

[0057] This embodiment provides an aluminum-silicon alloy sputtering target and its preparation method, such as figure 1 Shown, described preparation method comprises the following steps:

[0058] (1) Filling and compacting aluminum-silicon alloy powder with an average particle size of 60 μm in a stainless steel sheath to obtain a first green body; the proportion of aluminum in the aluminum-silicon alloy powder is 51.5wt%;

[0059] (2) Weld the top cover of the stainless steel sheath, and place it in the heating furnace, and the first green body obtained in step (1) is 1Pa in absolute vacuum, and the degassing temperature is 350 ° C for 5h of vacuum degassing treatment, obtaining a second green body;

[0060] (3) Place the stainless steel sheath in a hot isostatic pressing sintering furnace, and perform hot isostatic pressing on the second green body obtained in step (2) at an applied pressure of 150 MPa and a sintering temperature of 500°C for 4 hours to obtain Aluminum sil...

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Abstract

The invention provides an aluminum-silicon alloy sputtering target material and a preparation method and application thereof. The preparation method comprises the following steps that (1) aluminum-silicon alloy powder is filled and tamped to obtain a first green body; (2) vacuum degassing treatment is carried out on the first green body obtained in the first step to obtain a second green body; (3) hot isostatic pressing treatment is conducted on the second green body obtained in the second step at the temperature of 400-520 DEG C, and an aluminum-silicon blank is obtained; and (4) the aluminum-silicon blank obtained in the third step is machined to obtain the aluminum-silicon alloy sputtering target material. The density of the aluminum-silicon alloy sputtering target material is higher than or equal to 99%. According to the preparation method, the technological process is simplified, the hot isostatic pressing temperature is reduced, meanwhile, high density and good structural uniformity of the target material are guaranteed, and the production cost is saved.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, and relates to an aluminum-silicon alloy sputtering target, in particular to an aluminum-silicon alloy sputtering target and its preparation method and application. Background technique [0002] At present, aluminum-silicon alloy targets for vacuum sputtering coatings have been widely used in the electronics industry and glass coating industry. Through the optimized design and implementation of surface and thin film technology and engineering, new mechanical functions, decorative functions and special functions (including sound, light, electricity, magnetism and their conversion and various special physical and chemical properties) are given to the material surface. The application of vacuum coating technology must first prepare a specific target material for the film layer to be used, and then use electron beam, ion beam or magnetron sputtering to bombard the target material to deposi...

Claims

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Application Information

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IPC IPC(8): C23C14/34B22F3/02B22F3/15B22F3/24B22F5/00C22C21/02
CPCC23C14/3407C23C14/3414B22F3/02B22F3/15B22F3/24B22F5/00C22C21/02B22F2003/247
Inventor 姚力军边逸军潘杰王学泽邹浪
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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