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Spatial wafer processing with improved temperature uniformity

A technology for wafers and processing stations, applied in the directions of plasma, coating, gaseous chemical plating, etc., can solve the problem of uneven temperature of wafers

Pending Publication Date: 2021-06-08
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Differences in the amount of time each part of the wafer spends in each thermal environment, resulting in non-uniform temperatures across the wafer

Method used

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  • Spatial wafer processing with improved temperature uniformity
  • Spatial wafer processing with improved temperature uniformity
  • Spatial wafer processing with improved temperature uniformity

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Embodiment Construction

[0017] Before describing a few exemplary embodiments of the present disclosure, it is to be understood that the disclosure is not limited to the details of construction or process steps set forth in the following description. The disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0018] As used herein, "substrate" refers to any substrate or material surface formed on a substrate on which thin film processing is performed during a manufacturing process. Examples of substrate surfaces on which processing may be performed include silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide , glass, sapphire, and any other material such as metals, metal nitrides, metal alloys, and other conductive materials, depending on the application. Substrates include, but are not limited to, semiconductor wafers. The substrate may be exposed to...

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Abstract

Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5 DEG C is developed upon moving the wafer between the stations in about 0.5 seconds.

Description

technical field [0001] The present disclosure generally relates to apparatus and methods for processing wafers. In particular, the present disclosure relates to a processing chamber having a matched thermal environment for wafers being processed. Background technique [0002] Current atomic layer deposition (ALD) processes have many potential problems and difficulties. Many ALD chemistries (such as precursors and reactants) are "incompatible," meaning that the chemicals cannot mix together. If incompatible chemistries are mixed together, chemical vapor deposition (CVD) processing may occur instead of ALD processing. CVD processing generally has less thickness control than ALD processing and / or can result in the generation of gas phase particles, which can lead to defects in the resulting device. For traditional time-domain ALD processes that flow a single reactive gas into the process chamber at a time, long purge / pump times occur so that the chemicals do not mix in the g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/324C23C16/455H01L21/67H01J37/32H05H1/46
CPCH01L21/6719H01L21/67126H01L21/67167H01L21/68764H01L21/68771H01L21/67248H01L21/67103C23C16/4557C23C16/45565C23C16/4584C23C16/46H01L21/0228H01L21/02274H01L21/02315H01L21/324C23C16/45525H01L21/67098H01J37/32009H05H1/46C23C16/45536C23C16/45544C23C16/4583H01L21/67115
Inventor 约瑟夫·奥布赫恩桑吉夫·巴鲁贾德瑞蒂曼·苏巴·卡什亚普杰瑞德·艾哈迈德·里特哈斯·乌拉维迈克尔·赖斯
Owner APPLIED MATERIALS INC