Assembling method for target material and copper back plate

An assembly method and copper backplane technology, which is applied in the field of target assembly, can solve the problems of long residence time on the sputtering surface, easy rusting of copper and air, and increased difficulty in processing, so as to save manpower and material resources, process optimization, contact short time effect

Active Publication Date: 2021-06-15
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The current process of the copper target adopts the process of turning the welding surface first by OP1, and then turning the back surface by OP2. In this way, the sputtering surface stays for a long time after turning, and the copper is easy to rust after contacting with air, which increases the difficulty of subsequent processing. Costly rust removal

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  • Assembling method for target material and copper back plate
  • Assembling method for target material and copper back plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] This embodiment provides a method for assembling a target material and a copper backplane, and the method includes the following steps:

[0042] (1) Pretreatment of titanium target and copper backplane;

[0043] The pretreatment method of the titanium target includes: turning the end thread on the welding surface of the target, the pitch of the end thread is 0.4*0.2, ultrasonically cleaning the welding surface of the target with IPA liquid for 10 minutes and vacuum Drying, the vacuum degree is not higher than 0.01Pa, and the time is 60min;

[0044] The pretreatment method of the copper backplane includes: sequentially performing OP2 turning on the backplane surface and OP1 turning welding surface on the copper backplane, the pitch of the OP1 turning welding surface is 0.4*0.2, and performing on the copper backplane Ultrasonic cleaning of IPA liquid for 10 minutes and vacuum drying, the vacuum degree is not higher than 0.01Pa, and the time is 60 minutes;

[0045] (2) A...

Embodiment 2

[0052] This embodiment provides a method for assembling a target material and a copper backplane, and the method includes the following steps:

[0053] (1) Pre-treat the target and copper backplane;

[0054] The pretreatment method of the titanium target includes: turning the end thread on the welding surface of the target, the pitch of the end thread is 0.5*0.1, ultrasonically cleaning the welding surface of the target with IPA liquid for 15 minutes and vacuum Drying, the vacuum degree is not higher than 0.01Pa, and the time is 90min;

[0055] The pretreatment method of the copper backplane includes: sequentially performing OP2 turning on the backplane surface and OP1 turning welding surface on the copper backplane, the pitch of the OP1 turning welding surface is 0.5*0.1, and performing on the copper backplane Ultrasonic cleaning of IPA liquid for 10 minutes and vacuum drying, the vacuum degree is not higher than 0.01Pa, and the time is 60 minutes;

[0056] (2) Assembling a...

Embodiment 3

[0063] This embodiment provides a method for assembling a target material and a copper backplane, and the method includes the following steps:

[0064] (1) Pretreatment of titanium target and copper backplane;

[0065] The pretreatment method of the titanium target includes: turning the end thread on the welding surface of the target, the pitch of the end thread is 0.42*0.16, ultrasonically cleaning the welding surface of the target with IPA liquid for 15 minutes and vacuum Drying, the vacuum degree is not higher than 0.01Pa, and the time is 90min;

[0066] The pretreatment method of the copper backplane includes: sequentially performing OP2 turning on the backplane surface and OP1 turning welding surface on the copper backplane, the pitch of the OP1 turning welding surface is 0.42*0.16, and performing on the copper backplane Ultrasonic cleaning of IPA liquid for 15 minutes and vacuum drying, the vacuum degree is not higher than 0.01Pa, and the time is 75 minutes;

[0067] (...

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Abstract

The invention provides an assembling method for a target material and a copper back plate. The method comprises the following steps that (1) the target material and the copper back plate are pretreated; (2) the pretreated target material and the pretreated copper back plate are assembled and welded; (3) a heat dissipation water channel is formed in the copper back plate; and (4) sand blasting treatment and meltallizing treatment are carried out on the surfaces of the assembled target material and the assembled copper back plate. Pretreatment of the copper back plate comprises the step of carrying out OP2 turning and OP1 turning on the copper back plate at a time. According to the assembling method, welding can be rapidly conducted after turning, the contact time of the turning face and air is short, rusting is not prone to happening, the product quality is improved, a product does not need to be subjected to rust removal treatment, manpower, material resources and working hours are saved, cost is reduced, and the technology is further optimized.

Description

technical field [0001] The invention belongs to the field of target assembly and relates to an assembly method of a target and a copper backboard. Background technique [0002] Sputtering Target Back Plate (BP): Metal sputtering target is the material used as cathode in sputtering deposition technology. The cathode material breaks away from the cathode in the form of molecules, atoms or ions under the impact of positively charged cations in the sputtering machine and redeposits on the surface of the anode. Since the metal sputtering target is often a relatively expensive material such as high-purity aluminum, copper, titanium, nickel, tantalum, and precious metals, relatively common materials are often used as the copper backplane during its manufacture. The copper backplane plays the role of supporting the target, cooling, and reducing costs. The commonly used materials are aluminum alloy (ALBP), copper alloy (CUBP), etc. [0003] The current process of copper target adop...

Claims

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Application Information

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IPC IPC(8): B23P15/00
CPCB23P15/00
Inventor 姚力军边逸军潘杰王学泽侯娟华
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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