Single crystal copper two-body abrasive wear simulation method

Abstract

The invention discloses a single crystal copper two-body abrasive wear simulation method, and belongs to the field of analogue simulation calculation. The method comprises the following steps: (1) modeling single crystal copper two-body abrasive wear by adopting Lammpps software; (2) dividing the single crystal copper matrix model into a fixed layer, a constant temperature layer and a Newton layer according to different purposes; (3) establishing a space coordinate system, adopting a periodic boundary condition in a sliding direction, and adopting a fixed boundary condition in a Y direction; (4) setting a load and a speed, performing energy minimization on the single crystal copper two-body abrasive wear model by adopting a conjugate gradient method, performing relaxation by adopting an NVT ensemble until the substrate temperature is constant at a preset temperature, and performing dynamic simulation by adopting an NVE ensemble; and (5) adopting Ovito and Atomeye software for displaying the simulation process, and obtaining the surface appearance of the single crystal copper in the abrasion process. The method is beneficial to analyzing and summarizing rules and mechanisms of material deformation.

Description

technical field [0001] The invention belongs to the field of simulation calculation, in particular to a method for simulating abrasive wear of single-crystal copper two-body. Background technique [0002] With the rapid development and demand of the semiconductor industry and the increasing requirements of the electronic industry for the integration of components, severe challenges have been posed to the production and manufacture of semiconductors. The higher the degree of integration, the higher the processing quality of parts is required. The processing scale of parts has crossed the macro scale and reached the micro scale. The processing mechanism and material deformation are quite different from the macro scale. Therefore, a new processing method is required. method. Understanding the evolution of machining mechanisms and material forming processes can help guide the production process to obtain higher quality parts. The reduction of part size depends on the increase ...

AI Technical Summary

Problems solved by technology

The key factors affecting the effect of chemical mechanical polishing are abrasive particles, polishing liquid and processing parameters, etc. The interaction of various factors increases the difficulty of research

Although CMP technology is widely used in the field of semiconductor manufacturing, due to the many variables affecting the CMP process and the interaction of multiple variables, the contact mode between the workpiece, polishing liquid, abrasive and polishing disc is extremely complicated. In mechanical polishing, the nature of many phenomena has not been fully understood, the basic mechanism of the polishing process has not been fully understood, and the processing methods are still in the empirical stage.

The precise control of the CMP process depends on the research on the mechanism of material removal during processing, and in the material removal process, only a few atoms or atomic layers are removed in a short time, it is difficult to control and observe the entire process

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