Manufacturing method of array substrate, array substrate and display device

Abstract

The invention provides a manufacturing method of an array substrate, the array substrate and a display device. The manufacturing method of the array substrate comprises the following steps: providing a substrate; manufacturing a first metal layer on the substrate for forming a grid electrode; manufacturing a gate insulating layer on the first metal layer; manufacturing an active layer on the gate insulating layer,wherein the active layer is made of indium-containing oxide, and the proportion of indium atoms in metal atoms in the indium-containing oxide is 0.25-1; and manufacturing a second metal layer on the active layer for forming a source and a drain. According to the array substrate, when the active layer between the grid electrode and the source and drain electrode is manufactured on the substrate, the active layer is made of the indium-rich indium-containing oxide in which the proportion of indium atoms in metal atoms is 0.25-1, so that the contact resistance between the source and drain electrode and the active layer is reduced, the electron migration capability of a thin film transistor device in the array substrate is improved, and the current bearing capacity and the switch conversion speed characteristic of the thin film transistor device are improved.

Description

technical field [0001] The present application relates to the technical field of display devices, and in particular to a manufacturing method of an array substrate, an array substrate and a display device. Background technique [0002] Thin Film Transistor (TFT) is the core device of the display, regardless of AMLCD (Active Matrix Liquid Crystal Display) or AMOLED (Active Matrix Organic Light-Emitting Diode) display, each pixel depends on the thin film transistor for switching and driving. According to different semiconductor materials of the active layer of the thin film transistor, the current mainstream thin film transistors can be classified into amorphous silicon thin film transistors, low temperature polysilicon thin film transistors and oxide thin film transistors. [0003] At present, the preparation process of BCE structure IGZO TFT in the industry is complicated and the cost is high. In the mass-produced BCE structure IGZOTFT, there is a large contact resistance b...

AI Technical Summary

Problems solved by technology

[0005] The present application provides a method for manufacturing an array substrate, an array substrate, and a display device, so as to solve the problem of excessive contact resistance of thin film transistors in the array substrate

Images