Manufacturing method of SONOS device

Abstract

The invention provides a manufacturing method of an SONOS device. The method comprises the following steps: firstly, providing a semiconductor substrate, defining a storage tube region, a selection tube region and a peripheral logic region on the semiconductor substrate, forming an ONO layer on the semiconductor substrate to cover the storage tube region, the selection tube region and the peripheral logic region with the ONO layer, then coating the front surface of the semiconductor substrate with a photoresist, developing, opening the selection tube region and the peripheral logic region, then removing the ONO layer on the selection tube region and the peripheral logic region, then carrying out surface cleaning, then coating the front surface of the semiconductor substrate with the coating, developing, opening the storage tube region and the selection tube region, carrying out ion implantation on the storage tube region and the selection tube region, and finally carrying out surface cleaning. Two times of surface cleaning are carried out in the manufacturing process of the SONOS device, so that a good cleaning effect is achieved, residual polymers and photoresist are thoroughly removed, the uniformity of subsequent ion implantation can be effectively improved, and the uniformity and reliability of the device are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a SONOS device. Background technique [0002] Flash memory (Flash memory) is a non-volatile memory developed based on erasable programmable read-only memory (EPROM) and electrically erasable programmable read-only memory (EEPROM). It can be easily and quickly erased and written multiple times. Since its inception, flash memory has been widely used in the storage field. However, since flash memory with a floating gate structure requires high-voltage operation in the process of reading, writing and erasing, while complementary metal-oxide-semiconductor (CMOS) does not require high-voltage operation, and flash memory is a double-layer polysilicon structure with a floating gate and a control gate. CMOS is a single-layer polysilicon structure, so the integration of flash memory and CMOS devices is difficult and the process is complicated. The SONOS ...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a kind of manufacturing method of SONOS device, to solve the problem that plasma, ONO, photoresist, etc. are easy to form with the moisture in the air in the process of adopting dry etching to form the ONO structure of storage tube region in the prior art. Polymers will cause uneven subsequent ion implantation, which will affect the uniformity of the device

Images