A single crystal growth process equipment for semiconductor compound materials

Abstract

A single crystal growth process equipment for semiconductor compound materials, relating to the field of single crystal growth equipment, including a furnace body, a quartz tube, a quartz tube, and a crucible, and a single-stage heater is fixedly arranged between the furnace body and the quartz tube. A temperature gradient cylinder is fixedly installed on the outside of the single-stage heater. The temperature gradient cylinder has a ring-shaped liquid passage chamber. The bottom of the liquid passage chamber is threaded with a sealing ring. The cylinder is threadedly connected, and the sealing ring is evenly processed with a liquid inlet hole along the circumference, and a liquid inlet pipe is inserted in the liquid inlet hole, and the liquid inlet pipe is fixedly connected with the sealing ring. The upper end of the cavity is provided with a liquid outlet. Since the range of the temperature gradient can be changed, the present invention can provide gradient fields in different ranges under the condition that the length of the heater remains unchanged, thereby being suitable for single crystal growth of different substances; and the continuity of the temperature gradient is good.

Description

technical field [0001] The invention belongs to the field of single crystal growth equipment, in particular to a single crystal growth process equipment for semiconductor compound materials. Background technique [0002] The methods used to mass-produce gallium arsenide and germanium crystals include the traditional LEC method (liquid-enclosed Czochralski method) and the HB method (horizontal boat production method). At the same time, the VGF method (vertical gradient solidification method), VB method (vertical Bridgman method) and VCG method (vapor pressure controlled Czochralski method) which have the advantages of the above two methods have also been developed. One of the preferred methods for crystals has become a commonly used single crystal growth method at present. [0003] At present, multi-stage heaters are commonly used in VGF single crystal growth process equipment to heat the polycrystalline material and provide the heat energy required for crystal growth. Durin...

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Problems solved by technology

Using multi-stage heating can make the temperature gradient in the crucible small and constant, but due to the discontinuity of the heating temperature between the heaters in each stage, the axial temperature between the stages and the axial temperature inside the stage are discontinuous. Inhomogeneity, which will affect the temperature fluctuation of the crystal there, will promote the growth of twins

In order to solve the problem of discontinuous heating temperature of the multi-stage heater, the Chinese patent application number 201610937760.4 discloses a device for reducing InP crystal twins based on the VGF method, using a single-stage resistive cup heater 9 to replace the traditional multi-stage type heater, and a tapered cylindrical structure 10 is set between the crucible and the single-stage heater. The temperature of the heater is transmitted to the crucible after passing through the cylindrical structure, and heat evenly distributed in the axial direction is generated when passing through the cylindrical structure. resistance, so that a uniform temperature gradient is formed when the heat is transferred to the crucible, but since the cylindrical structure 10 is always located in the heater, its own temperature gradually approaches the furnace temperature over time, and it is difficult to form an ideal temperature when the temperature is transferred to the crucible gradient

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