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Method applied to photoetching process of small-size sample

A small size, sample light technology, applied in the field of semiconductor technology, can solve the problems of vacuum nozzle size mismatch, etc., achieve the effect of easy removal, small damage, and solve the effect of "edge"

Active Publication Date: 2021-06-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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  • Abstract
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Problems solved by technology

[0006] In view of this, in order to solve the problem of "edge" effect of small-sized samples in the process of dispensing, and in the photolithography process, the size of small-sized samples The problem of the size mismatch between the vacuum nozzle of the machine and the lithography machine, the invention provides a method applied to the lithography process of small-sized samples

Method used

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  • Method applied to photoetching process of small-size sample
  • Method applied to photoetching process of small-size sample
  • Method applied to photoetching process of small-size sample

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] figure 1 A flowchart of a method applied to a small-scale sample photolithography process provided by an embodiment of the present invention.

[0032] combine figure 1 As shown, the method includes operations S101-S105.

[0033] In operation S101, a small-sized sample 1 to be photoetched is provided, and equipment used for the cold pressing method is provided.

[0034] According to an embodiment of the present invention, for example, the small-sized sample 1 to be photolithography can be a diamond 1a deposited with a Ti / Au composite film, and the equipment used in the cold pressing method can be a powder tablet press.

[0035] According to an embodiment of the present invention, respectively use acetone and abso...

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Abstract

The invention discloses a method applied to a photoetching process of a small-size sample. The method comprises the following steps of placing a small-size sample to be photoetched on a tabletting mold of equipment used by a cold pressing method, filling the powder material for tabletting into a tabletting mold in which a small-size sample is placed, and applying pressure to a tabletting mold, and embedding the small-size sample into a tablet obtained by pressing the powder material for tabletting, so as to obtain a tablet product. The problem of 'edge' effect of a small-size sample in the glue uniformizing process is solved, and the surface utilization rate of the sample is improved. The problem that the size of a vacuum suction nozzle of a spin coater and the size of a vacuum suction nozzle of a photoetching machine are not matched with the size of a small-size sample to be photoetched in a small-size sample photoetching process is solved. And the method is suitable for small-size samples with regular and irregular shapes.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a method applied to the photolithography process of small-sized samples. Background technique [0002] In the semiconductor process, the photolithography process is an essential process step. Whether it is patterned material deposition or selective etching, it is inseparable from the support of the photolithography process. The traditional photolithography process includes three main steps of coating, exposure and development. For small-sized samples (side length or diameter less than 10mm), when the photoresist is thrown to the edge of the sample during the coating process, it will be resisted because there is no connected area outside, resulting in the thickness of the photoresist at the edge of the sample. larger. On the one hand, the surface utilization rate of the sample will be reduced. On the other hand, for contact exposure, the thicker edge photoresist...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/16G03F7/20B29C43/58B29C43/02
CPCG03F7/00G03F7/16G03F7/70691B29C43/02B29C43/58B29C2043/5808B29L2007/002
Inventor 冯梦阳孟宪权金鹏周广迪霍晓迪徐鹏飞王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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