55results about How to "Improve surface utilization" patented technology

The invention discloses a low-temperature high-activity methanation catalyst and a preparation method thereof. The catalyst comprises metallic nickel as an active component, AL2O3 as a carrier and MgO as a structure auxiliary agent, and an appropriate amount of lanthanum oxide and manganese oxide are added as active auxiliary agents. The catalyst comprises the following main components in percentage by mass: 18-45% of NiO, 40-70% of Al2O3, 5-30% of MgO, 0.4-5% of La2O3 and 0.1-5% of MnO2. The catalyst disclosed by the invention has the advantages of large specific area, uniform nickel dispersity, good heat stability, strong oxidation resistance, low active temperature, adaptability to low hydrogen-carbon ratio and the like. The catalyst is applicable to preparation of LNG (liquefied natural gas) through methanation of industrial gases including coke oven gas, coal synthesis gas, semi coke exhaust gas and the like rich in CO, CO2 and H2, is particularly applicable to a methanation reaction in a low-temperature section, and can effectively improve the quality of synthetic natural gas. Meanwhile, the invention also provides the preparation method of the catalyst, and the preparation method is simple in process flow and can realize industrial production easily.

The invention belongs to a micro electro mechanical (MEMS) processing field and relates to a monolithic embedded integrated silicon acceleration and pressure composite sensor. The objective of the invention is to provide the monolithic embedded integrated silicon acceleration and pressure composite sensor and a typical processing method for manufacturing the sensor. The composite sensor is of an integrated structure. An accelerometer includes a mass block-elastic diaphragm structure with a force sensitive resistor; a pressure gauge includes a pressure sensitive diaphragm with a force sensitive resistor and a sealed prefabricated cavity. The method includes the following steps of: a stress concentration structure processing step which is optional; a sensitive resistor processing step; a metal lead layer processing step; and accelerometer mass block-elastic diaphragm structure processing step. According to the monolithic embedded integrated silicon acceleration and pressure composite sensor of the invention, the accelerometer and the pressure gauge are designed in the same area, and therefore, the area of a chip can be saved, and high sensitivity can be realized when size is small. The sensor fabricated through adopting the method has functions of a pressure gauge and an accelerometer.

The invention provides a composite negative pole material for a lithium-ion battery and a manufacturing method of the negative pole material, aiming at overcoming the defect in the prior art that cycle performance of the material deteriorates caused by the factor that tin oxide falls off easily after charge-discharge cycles since graphene-loaded nano-tin oxide is used as the negative pole material for the lithium-ion battery. According to the invention, tin oxide-graphene-mesoporous carbon ternary composite material is used as the negative pole material. The manufacturing method comprises the following steps of: (1), carrying out ultrasonic dispersion on graphite oxide into deionized water, and adjusting the pH to be 9-10 by ammonia water; (2) dissolving pentahydrate stannic chloride into water, and adjusting the pH to be 9-10 by the ammonia water; (3) mixing the two solutions and transferring the solutions to a hydrothermal reaction kettle for hydrothermal reaction; (4) carrying out suction filtration and washing on obtained precipitate, carrying out ultrasonic dispersion on the obtained precipitate into a solvent, adding a mesoporous carbon precursor and stirring for hydrothermal reaction; and (5) carrying out suction filtration, washing, vacuum drying, sintering and smashing on the obtained precipitate so as to obtain the tin oxide-graphene-mesoporous carbon ternary composite material.

The invention belongs to the field of novel water pollution treatment technologies, and relates to a novel photo-catalysis water treatment technology adopting an ultrasonic atomizing process to enhance water pollution treatment effect. The novel photo-catalysis water treatment technology is characterized in that photo-catalyst-containing waste water is crushed into liquid drops of which the diameters are micron-sized; under the irradiation of a light source, photo-catalyst is stimulated to generate a photo-production active matter to catalyze and oxidize pollutants in a liquid membrane, so as to generate carbon dioxide, water and other virus-free degraded by-products. Due to the auxiliary function of ultrasonic atomizing, the external diffusion resistance of the surfaces of particles can be reduced, the mass transfer efficiency can be enhanced, the surface utilization ratio of the photo-catalyst can be improved, and catalyst poisoning can be avoided; the liquid membrane on the surface of the photo-catalyst serves as a reaction medium, so as to reduce loss of light diffusion and absorption, improve light energy utilization ratio and the utilization ratio of the photo-catalyst, and solve the problems such as catalytic activity reduction caused by clustering and precipitation of the photo-catalyst.

The invention relates to a hair shaving knife head. The hair shaving knife head is characterized in that a first guide rail, a second guide rail and a fixed guide rail are arranged at the bottom of anouter knife net, so that a first knife groove, a second knife groove, a third knife groove and a fourth knife groove are formed in the bottom of the outer knife net, one end of a hair inlet groove ineach of the first knife groove and the fourth knife groove is open and communicates with the outside, inner knife heads are correspondingly placed in the first knife groove, the second knife groove,the third knife groove and the fourth knife groove and are correspondingly attached to the bottom end faces of the first knife groove, the second knife groove, the third knife groove and the fourth knife groove. The hair shaving knife head has the beneficial effects that the first guide rail, the second guide rail and the fixed guide rail are arranged at the bottom of the outer knife net, so thatthe four independent knife grooves are formed in the bottom of the outer knife net, by adopting the structure of the four knife grooves, the length of the knife head in each knife groove can be shortened, the flatness forming requirement of the single knife head is correspondingly lowered, the machining difficulty of the knife head is reduced, the production benefit of the knife head is improved,and the production cost of the knife head is reduced.

The invention discloses a preparation method for a high-specific-capacitance graphene/high-surface-activated carbon composite material, and aims to provide the preparation method for active carbon composite material with low cost, high specific capacitance and high specific surface area utilization ratio. The preparation method is realized by the technical scheme as follows: taking peeled graphite oxide slurry as a raw material, and drying the graphite oxide slurry at a temperature of minus 40 to minus 20 DEG C; then reducing the graphite oxide into graphene oxide at a temperature of 200-500 DEG C, and adding high-surface-activated carbon in the graphite oxide stage; meanwhile, adding a dispersing agent to be stirred and mixed, and performing ultrasonic dispersion to enable the graphite oxide and the high-surface-activated carbon to be uniformly mixed, coating the surface of the high-surface-activated carbon with the graphite oxide to realize in-situ compositing of the graphite oxide and active carbon; and after performing low-temperature freezing and drying, performing puffing and reducing in the air atmosphere at a lower temperature of lower than 500 DEG C to reduce the graphite oxide into graphene oxide to prepare the in-situ composited graphene oxide/high-surface-activated carbon composite material.

The invention relates to a multi-heteroatom codoped hollow porous carbon material, a preparation method and application thereof. The method includes: firstly taking a metal-organic framework as the structure template and nitrogen source, then adding two reactants containing nitrogen, phosphorus and sulfur heteroatoms for in situ polymerization reaction on the surface of the metal-organic frameworkcompound, and doping nitrogen, phosphorus and sulfur heteroatoms at the same time to obtain a compound with similar geometric profile to a pure metal-organic framework compound crystal, and conducting high-temperature calcination and hydrochloric acid aqueous solution reaction to remove metal oxide, thus obtaining the multi-heteroatom codoped hollow porous carbon material; and mixing the composite material, acetylene black and a polytetrafluoroethylene emulsion evenly, then coating graphite paper with the mixture, and performing drying to obtain a capacitance desalination electrode. The method provided by the invention has the characteristics of simple operation and easily controllable conditions, and the obtained electrode has high specific surface area, good electrical conductivity andwettability, and has potential application prospects in capacitance desalination aspect.

The invention relates to a regeneration method of a metal catalyst, and belongs to the technical field of regeneration of deactivated catalyst. The regeneration method comprises the following steps: evenly mixing a deactivated catalyst with a nitrogen-containing compound, which can be degraded into nitrogen-containing gas at a high temperature; then placing the obtained mixture into a tubular furnace, and burning the mixture at a high temperature under the protection of inert gas so as to obtain the regenerated metal catalyst. The used nitrogen-containing compound can be degraded into nitrogen-containing gas at a high temperature, the nitrogen-containing gas can interact with metal particles so as to disperse metal particles and reduce the particle size of metal particles, thus the surface utilization rate of metal is improved; the used nitrogen-containing compound is degraded into gas at a high temperature, no other impurity is introduced; furthermore, the operation is simple, the method can be easily applied to the industrial production; and the method can effectively regenerate deactivated catalyst to obtain regenerated catalyst with recovered activity.

The invention relates to a circularly polarized micro-strip antenna adopting a wave-shaped groove structure, which is used for reducing the size of the antenna, expanding application occasions, reducing the processing cost and meeting the demands of the antenna. The micro-strip antenna adopts a coaxial feed structure and comprises a dielectric substrate, a metal floor and a metal patch with a groove structure, wherein the metal patch is positioned on the upper surface of the dielectric substrate, the groove structure comprises eight wave-shaped grooves and four square connecting grooves, two wave-shaped grooves which are in mutual mirroring and in one group are selected from the eight wave-shaped grooves as the standard, the other six wave-shaped grooves can be obtained by rotating the group of wave-shaped grooves which are in the mutual mirroring around the central position of the metal patch 90 degrees, 180 degrees and 270 degrees, and the four square connecting grooves are used for connecting the two wave-shaped grooves which are adjacent but not in mirroring. The circularly polarized micro-strip antenna has the advantages of reduced size and lowered processing cost.

The invention relates to the technical field of antenna designs and particularly relates to a medium waveguide crack array antenna with series feed of a metal hollow waveguide. According to the medium waveguide crack array antenna, the metal hollow waveguide is used as a crack array antenna of a feed device; compared with a traditional medium waveguide feed manner, a feed manner adopted by the invention has small loss; meanwhile, the metal hollow waveguide feed device does not adopt a traditional plane feed manner, and the feed device is independently arranged and is fixed with upper and lower layers of an antenna medium layer, so that a feed line does not occupy a surface area of the medium layer, and furthermore, the surface of the medium layer can be used for arranging antenna radiation cracks and the surface utilization rate of the medium layer is greatly improved.

The invention provides a preparation method of a nanofiber/electrogenesis bacterium film for microbial fuel cells, and belongs to the technical field of microbial fuel cells. According to the method,nanofibers are first prepared by utilizing an electrostatic spinning technology, and then, a nanofiber/electrogenesis bacteria film is prepared from the prepared nanofibers and electrogenesis bacteriain a co-suction filtration manner to serve as an anode material. The effective contact area of the electrogenesis bacteria and the electrode material is increased, the number of electrogenesis bacteria adhered onto the inner surface and the utilization rate of the inner surface are greatly improved, the transport efficiency of electrons on the interface of the electrogenesis bacteria and an electrode is obviously improved, and the output power density of cells is improved. The nanofiber/electrogenesis bacterium film has the advantages of excellent performance, simple process, easiness in large-scale production, low cost and the like, and has important application value in the field of microbial fuel cells.

The invention discloses a flexible substrate with a double-sided I-shaped composite structure. The flexible substrate comprises a substrate, grooves, connecting column bodies and island bodies, wherein the connecting column bodies are arranged on an upper surface and a lower surface of the substrate at equal intervals in a matrix form; the connecting column bodies on the lower surface of the substrate and the connecting column bodies on the upper surface of the substrate are in mirror symmetry; adjacent connecting column bodies are isolated by the grooves; the island bodies are arranged on the connecting column bodies; the transverse sizes of the island bodies are greater than or slightly greater than the transverse sizes of the connecting column bodies; adjacent island bodies are isolated by the grooves; electronic devices adhere to the island bodies; and crosslinking conductors connecting the electronic devices are hidden in the grooves. Through adoption of the flexible substrate, a strain complete isolation effect is achieved under a large deformation behavior, so that the service lives of the electronic devices are prolonged greatly. Moreover, the electronic device can be stuck to both sides at the same time, so that the surface utilization ratio of the flexible substrate is increased, thereby realizing a double-sided flexible electronic device having specific demands.

The invention discloses an ultrasonic-assisted titanium silicalite molecular sieve modification method, and relates to the technical field of molecular sieve modification, and the modification methodcomprises the following steps: S1, mixing a silicalite molecular sieve raw powder mother liquor, a template agent and mesoporous silica in proportion, and then carrying out primary heating for alcoholremoval; then adding tetra-n-butyl titanate, the template, mesoporous silica and tetra-n-butyl titanate in a molar ratio of (33-42): (5.5-14.8): 1; and S2, after heating and alcohol removal, carryingout secondary heating and alcohol removal on the mixed solution to prepare a titanium-silicon gelling reaction solution, heating and crystallizing the titanium-silicon gelling reaction solution at the temperature of 170-195 DEG C for 55-65 hours, carrying out solid-liquid separation on the obtained solid-liquid mixture to obtain a raw powder mother solution and a solid, and washing, drying and roasting the solid, carrying out superfine grinding treatment after roasting, and filtering with a 80-mesh sieve to obtain titanium silicalite molecular sieve raw powder. The method is beneficial to combination of the metal salt and the titanium silicalite molecular sieve, and the catalytic oxidation activity is further improved.

The invention relates to a vacuum switching tube for a protective circuit breaker of a generator outlet, solving the problem that the conventional vacuum switching tube has low surface utilization rate and small capacity and can not satisfy great current breaking requirement. The vacuum switching tube for a protective circuit breaker of a generator outlet comprises a guiding sleeve, ceramic insulated shells, a composite shielded sleeve, a movable end pipe core, a static end pipe core and a protective cap, wherein the ceramic insulated shell is respectively connected with the movable end pipe core and the static end pipe core by kovars; the composite shielded sleeve is connected with the ceramic insulated shells at both ends; and the contact combinations of the movable end pipe core and the static end pipe core are corresponding to each other. The vacuum switching tube for a protective circuit breaker of a generator outlet is characterized in that either contact combination is in arc-distributed electrode structure and respectively comprises a cup seat, a supporting disk, a magnetism-concentrating column, a contact body and an oxygen-free copper tray; the composite shielded sleeve comprises an arc absorption inner layer and a magnetic shielded outer layer; and the surface of a static conductive rod is provided with radiation grooves. The invention has the advantages of reasonable structure, strong current breaking and closing capabilities, small loop resistance, uniform electrode surface combustion, high surface utilization rate and strong radiation capability.

The invention relates to a NaY molecular sieve preparation method and the NaY molecular sieve prepared by the preparation method. The method comprises: a) making an aluminum source contact a sodium hydroxide solution to obtain a sodium-aluminum solution; b) making a silicon source contact a sodium hydroxide solution to obtain a sodium-silicon solution; c) making the sodium-aluminum solution contact the sodium-silicon solution to obtain a mixture I; and d) making the mixture I contact an acidic aluminum source solution to obtain a gel; and e) crystallizing the gel to obtain the NaY molecular sieve. The method of the invention can be used in industrial production of NaY molecular sieves.

The invention provides an earphone earplug, which comprises an earplug body, the earplug body is an antibacterial silica gel earplug, the antibacterial silica gel earplug is made of antibacterial silica gel, the antibacterial silica gel comprises an antibacterial agent finished product, the antibacterial silica gel comprises 0.04 wt%-6wt% of the antibacterial agent finished product, the antibacterial agent finished product comprises a nano antibacterial agent and a porous antibacterial agent carrier, and the antibacterial silica gel comprises 0.03 wt%-1.8 wt% of the nano antibacterial agent in percentage by weight; the antibacterial agent finished product contains the porous antibacterial agent carrier which has an ultrahigh specific surface area, so that the dispersion of effective components of the antibacterial agent is facilitated, the surface contact property of the antibacterial agent is greatly improved, the utilization rate of the inner surface of the antibacterial agent is improved, and the adding proportion of the antibacterial agent is greatly reduced; the addition amount of the antibacterial agent is low, the problem that the original performance of the silica gel can be influenced by the addition amount of the antibacterial agent with a high proportion is solved, and bad hidden dangers such as the mechanical performance and the wearing skin-friendly comfort of the antibacterial earplug are avoided.

The invention discloses a semiconductor device and a related manufacturing method. The semiconductor device comprises a substrate, and an isolation region and an epitaxial layer which are arranged onthe substrate in parallel. The epitaxial layer comprises a metal oxide semiconductor device; and the upper layer of the isolation region is a second drift region, the isolation region is divided intotwo layers, the thickness of each layer is smaller than that of the epitaxial layer, so that the thickness of the epitaxial layer can be increased, meanwhile, low annealing heat budget can be maintained, transverse diffusion of impurities is reduced, the surface utilization rate of the semiconductor device is increased, and cost is reduced. According to the manufacturing method of the semiconductor device, manufacturing of the epitaxial layer is divided into multiple layers, and meanwhile, the manufacturing of the isolation region is divided into a plurality of layers matched with the epitaxial layers in number, so that the depth of connection between the isolation regions and between the isolation regions and the adjacent layer is reduced, furthermore, annealing time or/and annealing temperature required for connection are reduced, transverse diffusion of impurities in the isolation regions is reduced, the width of the isolation regions is reduced, the area utilization rate of the semiconductor device is increased, and cost is reduced.

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: a substrate which comprises a first region, and the first region comprises a first longitudinal region and a second longitudinal region which are adjacent in the longitudinal direction; a channel body which is located on the substrate, the channel body extends in the longitudinal direction, wherein the channel body comprises a first channel part and a second channel part in the longitudinal direction, the transverse width of the first channel part is larger than that of the second channel part, the transverse direction is perpendicular to the longitudinal direction, in the first region, the first channel part is located in the first longitudinal region, and the second channel part is located in the second longitudinal region; a first gate structure across the first channel feature; and a second gate structure across the second channel feature. According to the embodiment of the invention, by increasing the transverse width of the first channel component, the carrier mobility in the pull-down transistor is improved, the surface utilization rate of the semiconductor structure is improved, and the integration level of the semiconductor structure is correspondingly improved.