Semiconductor device and related manufacturing method

A manufacturing method and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increasing device area, increasing the cost of a single chip, intensifying the lateral diffusion of impurities, etc., achieving low annealing thermal budget, The effect of improving surface utilization and reducing annealing time
CN111584615APending Publication Date: 2020-08-25JOULWATT TECH INC LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
JOULWATT TECH INC LTD
Publication Date
2020-08-25

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Abstract

The invention discloses a semiconductor device and a related manufacturing method. The semiconductor device comprises a substrate, and an isolation region and an epitaxial layer which are arranged onthe substrate in parallel. The epitaxial layer comprises a metal oxide semiconductor device; and the upper layer of the isolation region is a second drift region, the isolation region is divided intotwo layers, the thickness of each layer is smaller than that of the epitaxial layer, so that the thickness of the epitaxial layer can be increased, meanwhile, low annealing heat budget can be maintained, transverse diffusion of impurities is reduced, the surface utilization rate of the semiconductor device is increased, and cost is reduced. According to the manufacturing method of the semiconductor device, manufacturing of the epitaxial layer is divided into multiple layers, and meanwhile, the manufacturing of the isolation region is divided into a plurality of layers matched with the epitaxial layers in number, so that the depth of connection between the isolation regions and between the isolation regions and the adjacent layer is reduced, furthermore, annealing time or / and annealing temperature required for connection are reduced, transverse diffusion of impurities in the isolation regions is reduced, the width of the isolation regions is reduced, the area utilization rate of the semiconductor device is increased, and cost is reduced.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a related manufacturing method. Background technique

[0002] BCD (Bipolar-CMOS-DMOS) technology is a technology that can combine Bipolar (bipolar transistor), CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) and DMOS (double-diffusion Metal Oxide Semiconductor, bidirectional diffusion metal oxide semiconductor) Integrated process technology in which devices are simultaneously integrated on a single chip. LDMOS (Lateral Double Diffusion Metal-Oxide-Semiconductor, Lateral Double Diffusion Metal-Oxide-Semiconductor) device is a high-voltage lateral semiconductor device in the BCD process. It is generally used as a driving device for subsequent modules and is the most critical part of modern BCD process design.

[0003] In the traditional 0.18ΞΌm BCD process with epitaxial modules, the voltage specifications of...

Claims

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