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Plasma etching method and etching device

A plasma, to-be-etched technology, used in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., and can solve problems such as the inability to meet the requirements of high aspect ratio of through holes

Pending Publication Date: 2021-06-25
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During plasma etching, CH 2 f 2 、CH 3 F etc. are used as etching gas, but the through-hole structure etched by it cannot meet the requirements of high aspect ratio of through-holes in some application scenarios

Method used

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Embodiment Construction

[0032] As in the background art, using CH 2 f 2 、CH 3 The aspect ratio of the structure etched by the plasma produced by F etc. is small, which cannot meet the requirements of high aspect ratio in some application scenarios. The inventor's research found that the cause of this problem is mainly that CH 2 f 2 、CH 3 The etching rate of the mask layer by the plasma generated by F etc. is relatively high. 2 f 2 、CH 3 When the plasma generated by F etc. etches the layer to be etched at the bottom of the mask layer, it will not only etch in the depth direction, but also in the width direction, resulting in the etching of the via hole structure. The depth-to-width ratio is small.

[0033] Based on this, the present invention provides a plasma etching method and an etching device to overcome the above-mentioned problems in the prior art, wherein the etching method includes:

[0034] A device to be etched is provided, the device to be etched includes a substrate, a layer to be...

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PUM

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Abstract

The invention provides a plasma etching method and device. The method comprises the steps: providing a to-be-etched device comprising a substrate, a to-be-etched layer and a mask layer, wherein the to-be-etched layer and the mask layer are sequentially located on the substrate, and the mask layer exposes the to-be-etched region of the to-be-etched layer; etching the to-be-etched region of the to-be-etched layer by using plasma generated by etching gas, wherein the etching gas comprises first gas, the first gas comprises C4HxFy gas, x is larger than or equal to 1, and y is larger than or equal to 1. According to the invention, due to the fact that C4HxFy gas has an extremely low etching rate on a mask layer, when plasma generated by the C4HxFy gas is adopted to etch a to-be-etched layer at the bottom of the mask layer, a through hole structure with the high aspect ratio can be formed, so that the requirement for the high aspect ratio of the through hole structure in some application scenes can be met.

Description

technical field [0001] The present invention relates to the technical field of plasma etching, and more specifically, to a plasma etching method and an etching device. Background technique [0002] There are two basic etching processes in the semiconductor manufacturing process: dry etching and wet etching. Among them, dry etching is to expose the surface of the device to the plasma generated by the etching gas, and remove the exposed surface material through physical or chemical reaction between the plasma and the material on the surface of the device. Therefore, dry etching can also be called plasma etching. During plasma etching, CH 2 f 2 、CH 3 F etc. are used as etching gas, however, the through-hole structure etched by it cannot meet the high aspect ratio requirements of the through-hole in some application scenarios. Contents of the invention [0003] In view of this, the present invention provides a plasma etching method and an etching device to meet the high a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01L21/67H01J37/32
CPCH01L21/3065H01L21/67069H01J37/3244
Inventor 苏兴才吴紫阳秦阿宾
Owner ADVANCED MICRO FAB EQUIP INC CHINA